A functional field effect transistor with self-organized In_(0.15)Ga_(0.85)As/GaAs quantum wires(QWRs)as a channel was achieved by molecular beam epitaxy on a(553)B GaAs substrate.Both the three-dimensional image of a...A functional field effect transistor with self-organized In_(0.15)Ga_(0.85)As/GaAs quantum wires(QWRs)as a channel was achieved by molecular beam epitaxy on a(553)B GaAs substrate.Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure.The device with a gate-length of 2μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature.The saturated drain current is as high as 5.6 mA.The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer.In addition,the effective gate width was discussed in comparison with the geometric gate width of the device,from which a larger maximum transconductance of 130 mS/mm could be estimated.展开更多
The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing l...The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room temperature.The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.展开更多
文摘A functional field effect transistor with self-organized In_(0.15)Ga_(0.85)As/GaAs quantum wires(QWRs)as a channel was achieved by molecular beam epitaxy on a(553)B GaAs substrate.Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure.The device with a gate-length of 2μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature.The saturated drain current is as high as 5.6 mA.The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer.In addition,the effective gate width was discussed in comparison with the geometric gate width of the device,from which a larger maximum transconductance of 130 mS/mm could be estimated.
基金Supported by the High Technology Research and Development Programme of China under Contract 863-307-15-3(6).
文摘The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room temperature.The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.
