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共轭回转式电火花精密加工工艺及其展望
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作者 夏斯伟 刘志东 +3 位作者 吴小川 曾熊辉 郑宁 黄静 《电加工与模具》 北大核心 2024年第S01期26-32,38,共8页
回顾了电火花精密加工工艺的提出及其实现四类技术条件和回转式电火花加工的发展演变过程,着重介绍了共轭回转式电火花精密加工工艺的基本原理及其工艺特点,展示了应用回转式电火花精密加工的典型零件,并对回转式电火花精密加工进行技... 回顾了电火花精密加工工艺的提出及其实现四类技术条件和回转式电火花加工的发展演变过程,着重介绍了共轭回转式电火花精密加工工艺的基本原理及其工艺特点,展示了应用回转式电火花精密加工的典型零件,并对回转式电火花精密加工进行技术展望。 展开更多
关键词 电火花精密加工 共轭回转式 工艺原理 技术条件与展望
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脱盐水系统极高回收率工艺包的设计及工程应用
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作者 胡俊辉 安康 +2 位作者 李建华 曾雄辉 陈然 《山西化工》 CAS 2024年第6期242-246,共5页
针对脱盐水系统中水的利用率普遍较低的问题[1],设计了一种提高回收率的脱盐水工艺包,通过采用优质的高回收率超滤单元和对预处理工艺段的高浊排放水进行降浊处理回用[2],同时对脱盐水工艺段的高盐排放水进行深度除硬脱盐回用[3],使系... 针对脱盐水系统中水的利用率普遍较低的问题[1],设计了一种提高回收率的脱盐水工艺包,通过采用优质的高回收率超滤单元和对预处理工艺段的高浊排放水进行降浊处理回用[2],同时对脱盐水工艺段的高盐排放水进行深度除硬脱盐回用[3],使系统水的利用率大于92%。运行结果表明,通过采用高强度、耐污染的超滤膜产品,经过优化其运行模式,可以使超滤单元做到95%以上的回收率,并通过回用超滤排放的高浊排污水能使预处理段的回收率做到99.5%;通过对RO浓水的深度软化,再用浓水RO进行脱盐回用,可以把脱盐段的回收率做到92%,这样整个脱盐水系统就能轻松实现92%以上的极高回收率。产水水质能满足高温高压锅炉补给水电导率<0.2μS/cm,ρ(SiO_(2))<0.02 mg/L的水质标准[4],可作为厂区锅炉补给水使用。成本分析表明,该脱盐水工艺包的吨水运行成本约13元(含税及其它全部费用),具有较好的经济性。 展开更多
关键词 脱盐水系统 极高回收率工艺包 优质超滤 降浊除硬
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Eu^(3+),Tm^(3+)共掺GaN薄膜的发光特性和能量传递机制
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作者 王丹 夏永禄 +5 位作者 王晓丹 陈华军 陈家凡 毛红敏 曾雄辉 徐科 《光子学报》 EI CAS CSCD 北大核心 2022年第9期138-146,共9页
采用离子注入的方法制备了Eu^(3+),Tm^(3+)离子共掺杂GaN薄膜。通过温度依赖光致发光光谱研究了GaN:Eu^(3+)薄膜中Eu^(3+)的发光特性,发现了三类具有不同温度依赖特性的Eu^(3+)发射峰。利用阴极荧光光谱探究了GaN:Eu^(3+),Tm^(3+)薄膜... 采用离子注入的方法制备了Eu^(3+),Tm^(3+)离子共掺杂GaN薄膜。通过温度依赖光致发光光谱研究了GaN:Eu^(3+)薄膜中Eu^(3+)的发光特性,发现了三类具有不同温度依赖特性的Eu^(3+)发射峰。利用阴极荧光光谱探究了GaN:Eu^(3+),Tm^(3+)薄膜的光谱性质,发现随着Tm^(3+)剂量的增加,Eu^(3+)发射强度以及Tm^(3+)的I_(480)/I_(806)强度比值均发生降低,分析表明存在Eu^(3+)→Tm^(3+)离子的能量传递,并通过计算分析证明其能量传递机制主要为电偶极子-电偶极子相互作用。通过改变Eu^(3+)、Tm^(3+)离子在GaN薄膜中的剂量比例,实现了材料发光颜色的有效调控。 展开更多
关键词 光电子 光致发光 阴极荧光 氮化镓 能量传递
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GaN:Eu,Dy薄膜的结构和发光特性研究 被引量:1
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作者 陈华军 罗璇 +3 位作者 王晓丹 毛红敏 曾雄辉 徐科 《稀有金属》 EI CAS CSCD 北大核心 2023年第3期381-389,共9页
通过离子注入方法制备了一系列稀土Eu和Dy掺杂的GaN薄膜,研究了其结构、发光特性和能量传递机制。拉曼(Raman)光谱和X射线衍射(XRD)的研究一致表明:当Eu剂量保持不变时,随着Dy剂量增加,GaN晶格应变出现了先张应变后压应变的变化趋势。... 通过离子注入方法制备了一系列稀土Eu和Dy掺杂的GaN薄膜,研究了其结构、发光特性和能量传递机制。拉曼(Raman)光谱和X射线衍射(XRD)的研究一致表明:当Eu剂量保持不变时,随着Dy剂量增加,GaN晶格应变出现了先张应变后压应变的变化趋势。阴极荧光(CL)光谱表明:Eu,Dy共掺GaN样品的发光峰和单掺GaN样品的发光峰基本一致,这说明Eu和Dy共掺时并没有显著改变彼此的局域晶体场环境。在GaN中,对于Eu离子,^(5)D_(0)→^(7)F_(2)跃迁所对应的625 nm发光最强;对于Dy离子,^(4)F_(9/2)→^(6)H_(13/2)对应的583 nm发光最强。在Eu离子剂量保持不变的情况下,随着Dy离子注入剂量的增加,583 nm的发光逐渐变强,而625 nm的发光变弱。进一步,结合计算分析表明Eu离子主要通过电偶极-电偶极共振方式传递能量给Dy离子。最后发现随着离子注入剂量的改变,发光颜色在白色和红色间变化,色温在3889~4839 K变化。 展开更多
关键词 铕离子 镝离子 氮化镓 离子注入 发光特性 结构特性
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First dark matter search results from the PandaX-Ⅰ experiment 被引量:13
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作者 XIAO MengJiao XIAO Xiang +43 位作者 ZHAO Li CAO XiGuang CHEN Xun CHEN YunHua CUI XiangYi FANG DeQing FU ChangBo GIBONI Karl L. GONG HaoWei GUO GuoDong HU Jie HUANG XingTao JI XiangDong JU YongLin LEI SiAo LI ShaoLi LIN Qing LIU HuaXuan LIU JiangLai LIU Xiang LORENZON Wolfgang MA YuGang MAO YaJun NI KaiXuan PUSHKIN Kirill REN XiangXiang SCHUBNELL Michael SHEN ManBing STEPHENSON Scott TAN AnDi TARL Greg WANG HongWei WANG JiMin WANG Meng WANG XuMing WANG Zhou WEI YueHuan WU ShiYong XIE PengWei YOU YingHui zeng xionghui ZHANG Hua ZHANG Tao ZHU ZhongHua 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第11期2024-2030,共7页
We report on the first dark-matter(DM)search results from PandaX-I,a low threshold dual-phase xenon experiment operating at the China JinPing Underground Laboratory.In the 37-kg liquid xenon target with 17.4 live-days... We report on the first dark-matter(DM)search results from PandaX-I,a low threshold dual-phase xenon experiment operating at the China JinPing Underground Laboratory.In the 37-kg liquid xenon target with 17.4 live-days of exposure,no DM particle candidate event was found.This result sets a stringent limit for low-mass DM particles and disfavors the interpretation of previously-reported positive experimental results.The minimum upper limit,3.7×10-44cm2,for the spin-independent isoscalar DM-particle-nucleon scattering cross section is obtained at a DM-particle mass of 49 GeV/c2at 90%confidence level. 展开更多
关键词 dark matter direct detection XENON
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Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodoluminescence spectroscopy 被引量:1
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作者 WANG XiaoDan zeng xionghui +2 位作者 XU Ke MAO HongMin MA ChunLan 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第4期628-631,共4页
1.5at% Eu-doped GaN powders were prepared by a co-precipitation method.Powder X-ray diffraction(XRD)results shows that there is only the wurtzite phase.Cathodoluminescence spectra were measured at room temperature and... 1.5at% Eu-doped GaN powders were prepared by a co-precipitation method.Powder X-ray diffraction(XRD)results shows that there is only the wurtzite phase.Cathodoluminescence spectra were measured at room temperature and liquid nitrogen temperature,respectively.The band-to-band luminescence of GaN was shifted from 373 nm to 368 nm with the temperature decreasing from room temperature to liquid nitrogen temperature.The luminescence peaks at 537,557,579,590,597,614,653 and 701 nm are attributed to the Eu ions related transitions in the host of GaN powders and the peak positions were not influenced by the variation of temperature.With the increase of accelerating voltage,the intensity of all luminescence peaks was increased.The strongest luminescence peak at 614 nm shows non-symmetrical shape and is composed of 612,615 and 621 nm through Lorentzian fitting,which indicates there are oxygen and nitrogen environments of the Eu3+ions in the Eu-doped GaN powders. 展开更多
关键词 Eu GAN energy level SPECTRUM
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Investigation on Luminescent Properties of Eu-doped GaN Polycrystalline Prepared by Solid-state Reaction
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作者 WANG Xiaodan MO Yajuan +3 位作者 SHI Jianping zeng xionghui WANG Jianfeng XU Ke 《Journal of the Chinese Ceramic Society》 2016年第2期84-90,共7页
Eu-doped GaN was prepared by solid-state reaction with Ga_2O_3,Eu_2O_3 and NH_3 applied as raw materials.The structural and optical properties were investigated.According to XRD results,wurtzite-type GaN powder withou... Eu-doped GaN was prepared by solid-state reaction with Ga_2O_3,Eu_2O_3 and NH_3 applied as raw materials.The structural and optical properties were investigated.According to XRD results,wurtzite-type GaN powder without Eu_2O_3phase was obtained at 1000℃ and the grain size was about 20 run.Compared to the undoped GaN powder,all the Raman peaks of Eu-doped GaN powder were shifted towards lower phonon frequency about 2-6 cm^(-1),which may be resulted from the strain caused by the Eu^(3+) doping.The cathodo-luminescence(CL) spectra were measured from 80 to 293 K.Ultraviolet luminescence and Eu^(3+) luminescence were both observed when the temperature was below 200 K.When the temperature was increased to 293 K,the ultraviolet luminescence disappeared.However,the intensity of Eu^(3+) luminescence was nearly not influenced by temperature.A donor-acceptor pair(DAP) model based on O_N and Mg_(Ga) was pointed out for explaining the luminescence mechanism.The cathodo-luminescence spectra of nominal 1.0%,2.0%,3.0%and 5.0%(mole fraction) Eu-doped GaN at room temperature were summarized,which suggestes the 2.0%Eu-doped GaN has the highest Eu luminescent intensity. 展开更多
关键词 gallium nitride EUROPIUM LUMINESCENCE
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