A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated.Two low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by h...A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated.Two low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by holographic photolithography and wet-etching.The laser operates at a single-mode up to 255 mA,corresponding to an output power of 90 mW.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274046 and 61201103in part by the National High-Technology Research and Development Program of China under Grant No 2013AA014202.
文摘A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated.Two low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by holographic photolithography and wet-etching.The laser operates at a single-mode up to 255 mA,corresponding to an output power of 90 mW.