Fine structure in the electron emission process for DX(Sn)centers in AlGaAs has been studied with high resolution Laplace defect spectroscopy.The influence of the different local configuration of Al and Ga atoms aroun...Fine structure in the electron emission process for DX(Sn)centers in AlGaAs has been studied with high resolution Laplace defect spectroscopy.The influence of the different local configuration of Al and Ga atoms around the centers on the electron thermal emissions was observed.An experimental evidence for the microscopic structure of two DX-like centers in Sn-doped AlGaAs is provided.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69576022Natural Science Foundation of Fujian Province of China。
文摘Fine structure in the electron emission process for DX(Sn)centers in AlGaAs has been studied with high resolution Laplace defect spectroscopy.The influence of the different local configuration of Al and Ga atoms around the centers on the electron thermal emissions was observed.An experimental evidence for the microscopic structure of two DX-like centers in Sn-doped AlGaAs is provided.
