Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescen...Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescence device was driven by a frequency-modulated power supply.The optimum frequency is near 3 kHz.The dependence of electroluminescence intensity on boron impurity has been investigated.The intensity increases with increasing boron impurity.This is expected result according to“Band A”electroluminescence mechanism of donor-accepter pairs recombination.展开更多
The electron field emission from both diamond-like carbon(DLC)and nitrogen doped diamond-like carbon films by ion implantation was studied.The DLC films were deposited on a molybdenum layer coated on ceramic by using ...The electron field emission from both diamond-like carbon(DLC)and nitrogen doped diamond-like carbon films by ion implantation was studied.The DLC films were deposited on a molybdenum layer coated on ceramic by using pulsed laser deposition.The field emission measurements show that the incorporation of nitrogen in DLC films can increase current density and lower the turn-on field from 9 to 4 V/μm,which indicate that the nitrogen doped DLC films have a potential application as field emission materials for flat panel displays.展开更多
Chemical vapor deposited diamond films with ball-like surface morphologies for field electron emission are reported on Mo substrates.A transparent conducting thin film anode(indium-tin oxide film coated on glass subst...Chemical vapor deposited diamond films with ball-like surface morphologies for field electron emission are reported on Mo substrates.A transparent conducting thin film anode(indium-tin oxide film coated on glass substrate)technique was used to determine the locations of field emission sites on the film cathode.The emission site density was obtained by counting damage spots on the film anode by optical microscopy.These damage spots,caused by the impact of emission electrons,corresponded to the emission sites.With the ball-like diamond films,a low turn-on filed of 2.1 V/μm and high current density of 4 mA/cm2 from an emitting area of 0.3cm2 were obtained.A field enhancement model and injection mechanism have been developed to explain the low turn-on field and high emission current.展开更多
基金Supported by the National Natural Science Foundation of Chinathe Natural Science。
文摘Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescence device was driven by a frequency-modulated power supply.The optimum frequency is near 3 kHz.The dependence of electroluminescence intensity on boron impurity has been investigated.The intensity increases with increasing boron impurity.This is expected result according to“Band A”electroluminescence mechanism of donor-accepter pairs recombination.
基金the National Advanced Material Committee of China.
文摘The electron field emission from both diamond-like carbon(DLC)and nitrogen doped diamond-like carbon films by ion implantation was studied.The DLC films were deposited on a molybdenum layer coated on ceramic by using pulsed laser deposition.The field emission measurements show that the incorporation of nitrogen in DLC films can increase current density and lower the turn-on field from 9 to 4 V/μm,which indicate that the nitrogen doped DLC films have a potential application as field emission materials for flat panel displays.
基金Supported by the 863 Program of the National Science and Technology Committee of China.
文摘Chemical vapor deposited diamond films with ball-like surface morphologies for field electron emission are reported on Mo substrates.A transparent conducting thin film anode(indium-tin oxide film coated on glass substrate)technique was used to determine the locations of field emission sites on the film cathode.The emission site density was obtained by counting damage spots on the film anode by optical microscopy.These damage spots,caused by the impact of emission electrons,corresponded to the emission sites.With the ball-like diamond films,a low turn-on filed of 2.1 V/μm and high current density of 4 mA/cm2 from an emitting area of 0.3cm2 were obtained.A field enhancement model and injection mechanism have been developed to explain the low turn-on field and high emission current.
