Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and i...Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter （TSP） by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-di^nensional heat conduction model, the physical meaning of the channel temperature for AIGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.展开更多
The temperature in the active region of semiconductor modules can be measured by a vacuum system method.The test device is positioned on a vacuum test platform and heated in two ways,from the chip and from the case,to...The temperature in the active region of semiconductor modules can be measured by a vacuum system method.The test device is positioned on a vacuum test platform and heated in two ways,from the chip and from the case,to identify the required heat to establish stable temperature gradients for the two processes,respectively.A complementary relationship between the temperatures under the two heating methods is found.By injecting the total heat into the device,the resulting uniform temperature can be derived from the temperature curves of the chip and case.It is demonstrated that the temperature obtained from this vacuum system method is equivalent to the normal operating temperature of the device in the atmosphere.Further comparison of our result with that of the electrical method also shows good agreement.展开更多
文摘Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter （TSP） by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-di^nensional heat conduction model, the physical meaning of the channel temperature for AIGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.
基金Supported by the Beijing Municipal Natural Science Fund,under Grant No 4092005the Research Fund for Doctoral Program of Ministry of Education of China under Grant No 20091103110006.
文摘The temperature in the active region of semiconductor modules can be measured by a vacuum system method.The test device is positioned on a vacuum test platform and heated in two ways,from the chip and from the case,to identify the required heat to establish stable temperature gradients for the two processes,respectively.A complementary relationship between the temperatures under the two heating methods is found.By injecting the total heat into the device,the resulting uniform temperature can be derived from the temperature curves of the chip and case.It is demonstrated that the temperature obtained from this vacuum system method is equivalent to the normal operating temperature of the device in the atmosphere.Further comparison of our result with that of the electrical method also shows good agreement.
