基于GaN材料的耐高温、抗辐照等优越特性,使其与Si材料相比,更适用于航空航天以及太空探测领域.本文采用AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为探测器的前置放大电路,并测试了HEMT器件在不同工作温...基于GaN材料的耐高温、抗辐照等优越特性,使其与Si材料相比,更适用于航空航天以及太空探测领域.本文采用AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为探测器的前置放大电路,并测试了HEMT器件在不同工作温度时的S参数,对器件的小信号模型参数进行提取,得出AlGaN/GaN HEMT器件小信号等效高温电路模型的参数变化.结果表明,温度升高对器件小信号模型的本征参数会有很大的影响,因此高温情况下的小信号建模仍然必不可少.展开更多
CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The inte...CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).展开更多
文摘基于GaN材料的耐高温、抗辐照等优越特性,使其与Si材料相比,更适用于航空航天以及太空探测领域.本文采用AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为探测器的前置放大电路,并测试了HEMT器件在不同工作温度时的S参数,对器件的小信号模型参数进行提取,得出AlGaN/GaN HEMT器件小信号等效高温电路模型的参数变化.结果表明,温度升高对器件小信号模型的本征参数会有很大的影响,因此高温情况下的小信号建模仍然必不可少.
基金supported by the NSFC (No. 50532080)the Key Laboratory Projects of The Education Department of Liaoning Province (No. 20060131)
文摘CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).
