We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors. Two splits of PDA were performed in N2 ambient at 850...We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors. Two splits of PDA were performed in N2 ambient at 850°C/60 s and 1050°C/60 s, respectively. The 1050°C annealed capacitor could be programmed and erased normally by using Fowler-Nordheim (FN) injection. In contrast, the 850°C annealed device could not be erased, even though it could be programmed properly. By measuring the gate leakage current and the flatband voltage shift, we found the erase failure in the 850°C annealed device was due to a larger gate back-injection leakage current at Vg<0. The trend of gate leakage current was further verified in two Al/Al2O3/SiO2/p-Si control capacitors with the same PDA splits. In addition, constant voltage stress measurements on control capacitors in the FN regime showed that the change of gate leakage current followed an empirical Curie-von Schweidler law at Vg<0. The data pointed out the importance to further study the relation between PDA conditions and the defect generation properties in Al2O3 blocking layer.展开更多
The combination of capacitance- and current-voltage （CV/IV） measurements is used to analyze trap generation in sili- con-nanocrystal memory devices during Fowler-Nordheim （FN） programming/erasing cycling. CV and I...The combination of capacitance- and current-voltage （CV/IV） measurements is used to analyze trap generation in sili- con-nanocrystal memory devices during Fowler-Nordheim （FN） programming/erasing cycling. CV and IV curves are meas- ured after certain P/E cycles. The flatband voltage （Vro） and the threshold voltage （VtQ are extracted from CV curves by solv- ing one-dimensional Schrtidinger and Poisson equations. Both hole and electron trappings are observed in the tunneling SiO2. They show up in the accumulation and the inversion, respectively. By fitting FN tunneling current, the area densities of cy- cling-induced electron traps in the blocking oxide and in the tunneling oxide are finally determined.展开更多
文摘目的:观察基于中医体质学说的护理对2型糖尿病患者自我效能感、体质指数(BMI)及血糖控制的影响。方法:选取2型糖尿病(type 2 diabetes mellitus,T2DM)患者82例,按照随机数表法分为观察组和对照组,每组41例。对照组采取常规护理,观察组实施基于中医体质学说的护理。观察护理前后两组患者体质指数(body mass index,BMI)、腰臀围比(waistto hip ratio,WHR)、血糖[空腹血糖(fasting plasma glucose,FPG)、餐后2 h血糖(2 hours postprandial blood glucose,2hPG)]、血脂[总胆固醇(total cholesterol,TC)、甘油三酯(triglyceride,TG)、高密度脂蛋白胆固醇(high density lipoprotein cholesterol,HDL-C)、低密度脂蛋白胆固醇(low density lipoprotein cholesterol,LDL-C)]水平、自我效能感[糖尿病管理自我效能量表(diabetes management-efficacy scale,DESES)]及生活质量[糖尿病生命质量量表(adjusted diabetesspecific quality of life scale,A-DQOL)]评分。结果:出院前1天,观察组BMI、WHR、FPG、2hPG、TC、TG、HDL-C、LDL-C水平及A-DQOL评分较干预前降低(P<0.05),且低于对照组(P<0.05);观察组DESES评分较干预前升高(P<0.05),且高于对照组(P<0.05)。结论:基于中医体质学说的护理有助于控制T2DM患者血糖、血脂及BMI水平,提升其自我效能感与生活质量。
基金supported by the MOST (Grant Nos. 2010CB934200,2011CBA00600)the National Natural Science Foundation of China (Grant Nos. 60825403,61176073)+1 种基金the Director's Fund of IMECASthe National Science and Technology Major Project of China (Grant No.2009ZX02023-005)
文摘We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors. Two splits of PDA were performed in N2 ambient at 850°C/60 s and 1050°C/60 s, respectively. The 1050°C annealed capacitor could be programmed and erased normally by using Fowler-Nordheim (FN) injection. In contrast, the 850°C annealed device could not be erased, even though it could be programmed properly. By measuring the gate leakage current and the flatband voltage shift, we found the erase failure in the 850°C annealed device was due to a larger gate back-injection leakage current at Vg<0. The trend of gate leakage current was further verified in two Al/Al2O3/SiO2/p-Si control capacitors with the same PDA splits. In addition, constant voltage stress measurements on control capacitors in the FN regime showed that the change of gate leakage current followed an empirical Curie-von Schweidler law at Vg<0. The data pointed out the importance to further study the relation between PDA conditions and the defect generation properties in Al2O3 blocking layer.
基金supported by the National Basic Research Program of China ("973" Program) (Grant No. 2010CB934200)the National Natural Science Foundation of China (Grant No. 60825403)the Hi-Tech Research and Development Program of China ("863" Program) ( Grant No. 2008AA031403)
文摘The combination of capacitance- and current-voltage （CV/IV） measurements is used to analyze trap generation in sili- con-nanocrystal memory devices during Fowler-Nordheim （FN） programming/erasing cycling. CV and IV curves are meas- ured after certain P/E cycles. The flatband voltage （Vro） and the threshold voltage （VtQ are extracted from CV curves by solv- ing one-dimensional Schrtidinger and Poisson equations. Both hole and electron trappings are observed in the tunneling SiO2. They show up in the accumulation and the inversion, respectively. By fitting FN tunneling current, the area densities of cy- cling-induced electron traps in the blocking oxide and in the tunneling oxide are finally determined.
