A new model based on the alter layer induced by ion bombardment has been proposed,which can explain the depth profile of interface of Ta_(2)O_(5)/Ta quite well.In contradiction with the generally accepted point of vie...A new model based on the alter layer induced by ion bombardment has been proposed,which can explain the depth profile of interface of Ta_(2)O_(5)/Ta quite well.In contradiction with the generally accepted point of view the depth profile does not follow the shape of the error function.The dominant factor for resolution is the thickness of the alter layer(δ)rather than the electron mean free path(λ).The Ta_(2)O_(5)/Ta sample was prepared by the method of anodic oxidation with thickness of 500A.All the surface analyses were performed by using scanning Auger microprobe(model PHI-590)at room temperature.展开更多
The surface phenomena of Pb-Sn alloy under the Ar^(+) ion bombardment have been investigated by using a PHI-590 scanning Auger microprobe at room temperature.Theoretical analysis of experimental data showed that ion-b...The surface phenomena of Pb-Sn alloy under the Ar^(+) ion bombardment have been investigated by using a PHI-590 scanning Auger microprobe at room temperature.Theoretical analysis of experimental data showed that ion-bombardment-enhanced diffusion had occurred with a diffusion coefficient up to 10^(-15)cm^(2)/sec.A possible explanation is given.展开更多
文摘A new model based on the alter layer induced by ion bombardment has been proposed,which can explain the depth profile of interface of Ta_(2)O_(5)/Ta quite well.In contradiction with the generally accepted point of view the depth profile does not follow the shape of the error function.The dominant factor for resolution is the thickness of the alter layer(δ)rather than the electron mean free path(λ).The Ta_(2)O_(5)/Ta sample was prepared by the method of anodic oxidation with thickness of 500A.All the surface analyses were performed by using scanning Auger microprobe(model PHI-590)at room temperature.
文摘The surface phenomena of Pb-Sn alloy under the Ar^(+) ion bombardment have been investigated by using a PHI-590 scanning Auger microprobe at room temperature.Theoretical analysis of experimental data showed that ion-bombardment-enhanced diffusion had occurred with a diffusion coefficient up to 10^(-15)cm^(2)/sec.A possible explanation is given.
