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国内光伏路面效益的实证分析 被引量:2
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作者 张同贺 刘林忻 刘津 《科技创新与生产力》 2020年第7期39-44,共6页
光伏路面作为光伏产业与高速公路基础产业叠加融合的创新与探索,近年来受到社会各界的广泛关注。本文采用层次分析法,对国内首条光伏路面的综合效益进行实证分析。结果显示:光伏路面具有较高的社会效益与环境效益,在考虑补贴与税收优惠... 光伏路面作为光伏产业与高速公路基础产业叠加融合的创新与探索,近年来受到社会各界的广泛关注。本文采用层次分析法,对国内首条光伏路面的综合效益进行实证分析。结果显示:光伏路面具有较高的社会效益与环境效益,在考虑补贴与税收优惠的情况下,光伏路面在经济上具有可行性。在全面考虑经济、社会和环境三大效益的情况下,光伏路面具有较好的综合效益。 展开更多
关键词 光伏发电 光伏路面 层次分析法 税收补贴
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Photoluminescence from neodymium silicide thin films formed by MEVVA ion source
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作者 XIAO Zhi-Song XU Fei +3 位作者 CHENG Guo-An zhang tong-he YI Zhong-Zhen WANG Shui-Feng (Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University Beijing Radiation 《Nuclear Science and Techniques》 SCIE CAS CSCD 2001年第1期21-23,共3页
Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin... Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin film during the as-implanted state, but there was only single neodymium silicide compound in the postannealed state, and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violet luminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence (PL) increased with increasing the neodymium ion fluence. Moreover, the photoluminescence was closely dependent on the temperature of rapid thermal annealing (RTA). A mechanism of photoluminescence was discussed. 展开更多
关键词 MEVVA离子源 离子移殖 薄膜 光致发光
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Long range implantation by MEVVA metal ion source
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作者 zhang tong-he WU Yu-Guang +2 位作者 MA Fu-Rong LIANG Hong (Key Laboratory in University for Radiation Beam Technology and Material modification, Institute of Low Energy Nuclear Physics, Beijing Normal University Beijing Radiation Center, Beijing 100875) 《Nuclear Science and Techniques》 SCIE CAS CSCD 2001年第1期16-20,共5页
Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The ... Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The results showthat the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux andhigh dose. The implanted depth is 311.6 times greater than that ofthe corresponding ion range. The ionspecies, doses and ion fluxes play an important part in the long-range implantation. Especially,thermal atom chemistry have specific effect on the long-range implantation during high ion fluximplantation at transient high target temperature. 展开更多
关键词 MEVVA离子源 离子移植 扩散技术
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Modification of TiN Coatings by N^(+) and C^(+) Implantation with High Ion Flux
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作者 张通和 吴瑜光 +1 位作者 赵志勇 邓志威 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第3期196-198,共3页
The TiN coating changed from columnar structure to compact texture after N^(+)and C^(+)implantation.X-ray analysis showed that combining with N atoms,Ti and Ti_(2)N would be transformed into TiN Phases during N implan... The TiN coating changed from columnar structure to compact texture after N^(+)and C^(+)implantation.X-ray analysis showed that combining with N atoms,Ti and Ti_(2)N would be transformed into TiN Phases during N implantation.The ternary solid solution mixtures TiCN have been formed,while Ti,Ti_(2)N would be transformed into TiC and TiCN phases combining with C atoms after C implantation.The hardness of the TiN coating increased by 2.3-2.4 times after N^(+)or C^(+)implantation.The wear resistance of implanted TiN coatings is 2-3 times higher than that of unimplanted TiN coatings.When the drills were treated with the method,their lifetime would increase by 7 times comparing with unimplanted ones.As an attractive procedure,the ion implantation of the TiN coatings would find new applications in many fields. 展开更多
关键词 COATING WEAR RESISTANCE
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Improvement of Friction and Wear Resistance for Ta or Ta+C Implanted H21 Steel
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作者 杨建华 梁宏 +2 位作者 张通知 苏一 张涛 《Chinese Physics Letters》 SCIE CAS CSCD 1997年第11期865-868,共4页
Ta and C ions extracted from a metal vapor vacuum arc ion source were implanted into H21 steel,with an implantation dose of 3×10^(17)cm^(-2),extraction acceleration 42kV,and average ion beam flux about 40μA.cm^(... Ta and C ions extracted from a metal vapor vacuum arc ion source were implanted into H21 steel,with an implantation dose of 3×10^(17)cm^(-2),extraction acceleration 42kV,and average ion beam flux about 40μA.cm^(-2).Rutherford backscattering spectrum was used to measure the surface composition after Ta or Ta+C implantation.Observation of phase induced by Ta and C implantation was carried out by x-ray diffraction analysis.Experimental results showed that the wear rate of the implanted layer dropped 30%for Ta ion implantation and by a factor of 2.5 for Ta+C dual ion implantation.Thus Ta+C dual ion implantation was found to significantly reduce the friction coefficient of H21 steel.The wear mechanisms of the implanted layer were discussed. 展开更多
关键词 WEAR FRICTION STEEL
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Anomalous Diffusion of Mo Implanted into Aluminium
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作者 张通和 吴瑜光 +1 位作者 邓志威 钱卫东 《Chinese Physics Letters》 SCIE CAS CSCD 2001年第1期77-79,共3页
Mo ions are implanted into aluminium with a high ion flux and high dose at elevated temperatures of 300℃,400℃and 500℃.X-ray diffraction spectra show that the Al12Mo phases are formed.Rutherford backscattering spect... Mo ions are implanted into aluminium with a high ion flux and high dose at elevated temperatures of 300℃,400℃and 500℃.X-ray diffraction spectra show that the Al12Mo phases are formed.Rutherford backscattering spectroscopy indicates that a profile of Mo appears in Al around the depth of 550nm and with an atomic concentration of~7%,when Mo is implanted to the dose of 3×10^(17)/cm^(2) with an ion flux of 45μA/cm^(2)(400℃).If the dose increases to 1×10^(18)/cm^(2) at the same ion flux,the penetration of Mo ions in Al can reach a depth of 2μm,which is greater than the ion project range Rp(52.5nm).The results show that anomalous diffusion takes place.Owing to the intense atom collision cascades,the diffusion coefficient increases greatly with the increase of the ion flux and dose.The Mo diffusion coefficients in Al are calculated.The Mo retained dose in A1 increases obviously with the increase of the ion flux. 展开更多
关键词 DIFFUSION DIFFUSION IMPLANTED
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Reduction and compensation of lattice stress in high energy P^+ and P+Sb implanted silicon
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作者 WU Yu-Guang zhang tong-he +2 位作者 ZHAO Shou-Nan ZHU Zhong-Hua(Key Laboratary for Radiation Beam Technology and Materials Modification,Institute of Low Energy Nuclear Physics (Beijing Radiation Center), Beijing Normal University, Beijing 100875 South China Uni 《Nuclear Science and Techniques》 SCIE CAS CSCD 2000年第2期85-90,共6页
The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental result... The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×1013/cm2 is 2.2 times greater than at a dose of 3.6×1012/cm2. The stress decreases rapidly as the annealing time increases.It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6×1016/cm3, whereas the stress becomes positive when the concentration is greater than 6×16/cm3. The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1 ×1016/cm2, the stress is negative after annealing,and it is positive when the Sb dose is higher than 1×1016/cm2. The stress is close to zero for a Sb implantation dose of 1×1016/cm2. The best compensation dose of Sb to P implantation dose of 3×1016/cm2 is 1×1016/cm2. 展开更多
关键词 双重掺杂 半导体 缺陷 离子掺杂 硅晶格
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一种基于核密度聚类的电力负荷模式精细化识别算法研究 被引量:8
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作者 张桐赫 杜欣慧 王帅 《数学的实践与认识》 北大核心 2019年第8期155-164,共10页
密度峰值聚类算法(DPC)是一种基于密度的非监督学习算法.分析用电类型复杂的电力负荷数据集时,存在负荷曲线聚类效果过分依赖人为参数设定和无法识别潜在用电模式的缺陷.结合非参数核密度估计,使用带宽搜索与边界优化提出一种适应多类... 密度峰值聚类算法(DPC)是一种基于密度的非监督学习算法.分析用电类型复杂的电力负荷数据集时,存在负荷曲线聚类效果过分依赖人为参数设定和无法识别潜在用电模式的缺陷.结合非参数核密度估计,使用带宽搜索与边界优化提出一种适应多类型复杂用户的电力负荷数据优化聚类算法.在某市10KV真实数据集中进行算法测试,使用Davies-Bouldin有效性指标对比优化前后算法聚类效果.结果表明改进算法在面向用户类型复杂的电力数据集时,能够实现已知用电模式精确识别与潜在用电模式的深度挖掘并显著提高聚类有效性. 展开更多
关键词 非监督学习 模式识别 非参数估计 边界优化 负荷聚类
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