An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V...An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V） characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency（C-f） and capacitance-voltage（C-V） measurements, the Schottky barrier height between 0.2-0.3 eV is obtained according to standard Schottky theory.展开更多
基金National"973"Foundation of China(2005CB724501) Recreating Foundation of National Defence for ChineseAcademy of Sciences(CXJJ -145)
文摘An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V） characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency（C-f） and capacitance-voltage（C-V） measurements, the Schottky barrier height between 0.2-0.3 eV is obtained according to standard Schottky theory.
