目的调查临床实习压力对D型人格医学生心理健康产生的影响,为开展实习期医学生有针对性的心理健康教育提供帮助。方法采用D型人格量表(Type D Scale-14,DS14)对某医学院校处于临床实习期的476医学生的人格类型进行检测,进一步结合Beck-S...目的调查临床实习压力对D型人格医学生心理健康产生的影响,为开展实习期医学生有针对性的心理健康教育提供帮助。方法采用D型人格量表(Type D Scale-14,DS14)对某医学院校处于临床实习期的476医学生的人格类型进行检测,进一步结合Beck-Srivastava压力量表(Beck-Srivastava Stress Inventory,BSSI)及90项症状清单(Symptom Check List 90,SCL-90)结果,综合探讨临床实习压力对D型人格医学生心理健康的影响。结果 (1)在476名参与调查医学生中,共检出D型人格医学生145人,其中男生63人,女生82人,D型人格医学生的检出率为30.46%。D型人格男生在DS14的NA及SI 2个维度得分低于D型人格女生,但得分差异无统计学意义(t=-0.5864,-0.2402,P>0.05);非D型人格男生在DS14的NA维度得分高于非D型人格女生,在SI维度得分低于非D型人格女生,但得分差异均无统计学意义(t=1.6110,-0.8945,P>0.05)。(2)在压力方面,D型人格医学生与非D型人格医学生BSSI总分均高于72分,均达到了压力较高的诊断标准,且差异有统计学意义(t=9.1076,P<0.05)。D型人格医学生在BSSI的学习压力、人际关系及临床实践3个因子得分均高于3分,非D型人格医学生在BSSI的学习压力、经济压力、人际关系及临床实践4个因子得分均高于3分,均达到了压力较高的诊断标准。D型人格医学生在BSSI的学习压力、人际关系及临床实践3个因子得分均高于非D型人格医学生,且在临床实践1个因子得分差异有统计学意义(t=0.0298,P<0.05);D型人格医学生在BSSI的经济压力1个因子得分低于非D型人格医学生,且得分差异由统计学意义(t=-2.1661,P<0.05)。(3)在心理健康方面,D型人格医学生在SCL-90的强迫、人际关系、抑郁、焦虑、恐怖及精神病性6个因子得分均高于非D型人格医学生,且在人际关系、抑郁、焦虑及恐怖4个因子得分差异有统计学意义(t=2.8026,2.4681,3.5364,2.5155,P<0.05);D型人格医学生在SCL-90的躯体化、敌对性及偏执3个因子得分低于非D型人格医学生,但得分差异均无统计学意义(t=-1.6568,-1.4248,-1.3721,P>0.05)。结论临床实习期间医学生总体面临较大压力,D型人格医学生自感压力要大于非D型人格医学生,且压力对D型人格医学生心理健康的影响要大于对非D型人格医学生的影响。展开更多
[目的]探究催乳素受体(prolactin receptor,PRLR)基因InDel突变对绒山羊种群生长特性的影响。[方法]以陕北白绒山羊为研究对象,采用PCR扩增和测序技术法检测分析陕北白绒山羊PRLR基因的多态性,利用独立样本t检验和单因素方差法分析PRLR...[目的]探究催乳素受体(prolactin receptor,PRLR)基因InDel突变对绒山羊种群生长特性的影响。[方法]以陕北白绒山羊为研究对象,采用PCR扩增和测序技术法检测分析陕北白绒山羊PRLR基因的多态性,利用独立样本t检验和单因素方差法分析PRLR基因不同基因型与陕北白绒山羊生长性状之间的相关性。[结果]在所检测的1176只陕北白绒山羊群体中,PRLR基因第2内含子存在1个16 bp InDel突变,形成了纯合插入型(II)、杂合型(ID)与纯合缺失型(DD)3种基因型;在育成羊群体中,该InDel突变与生长性状无显著关联(P>0.05),在成年羊群体中,InDel突变与管围性状显著相关(P<0.05);在育成羊和成年羊全部群体中,InDel突变仍与管围性状显著相关(P<0.05)。[结论]PRLR基因16 bp InDel突变可能会对陕北白绒山羊生长发育产生显著影响,该位点可作为陕北白绒山羊辅助育种的候选分子标记。展开更多
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiat...In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.展开更多
The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowerin...The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowering(DIBL)under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide,and it is experimentally observed for short channel transistors.The enhanced DIBL effect manifests as the DIBL parameter increases with total dose.Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor.The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect,but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.展开更多
Total ionizing dose effects of different transistor sizes in a 0.18µm technology are studied by 60Coγ-ray irradiation.Significant threshold voltage shift is observed for the narrow channel devices,which is calle...Total ionizing dose effects of different transistor sizes in a 0.18µm technology are studied by 60Coγ-ray irradiation.Significant threshold voltage shift is observed for the narrow channel devices,which is called the radiation induced narrow channel effect(RINCE).A charge sharing model is introduced to understand the phenomenon.The devices'characteristic degradations after irradiation,such as threshold voltage shift,increase in on-state current under different drain biases and substrate biases,are discussed in detail.Radiation induced oxide trapped charge at the edges of shallow trench isolation plays an important role in the RINCE.Narrow channel devices are susceptible to the total ionizing dose effect.展开更多
文摘目的调查临床实习压力对D型人格医学生心理健康产生的影响,为开展实习期医学生有针对性的心理健康教育提供帮助。方法采用D型人格量表(Type D Scale-14,DS14)对某医学院校处于临床实习期的476医学生的人格类型进行检测,进一步结合Beck-Srivastava压力量表(Beck-Srivastava Stress Inventory,BSSI)及90项症状清单(Symptom Check List 90,SCL-90)结果,综合探讨临床实习压力对D型人格医学生心理健康的影响。结果 (1)在476名参与调查医学生中,共检出D型人格医学生145人,其中男生63人,女生82人,D型人格医学生的检出率为30.46%。D型人格男生在DS14的NA及SI 2个维度得分低于D型人格女生,但得分差异无统计学意义(t=-0.5864,-0.2402,P>0.05);非D型人格男生在DS14的NA维度得分高于非D型人格女生,在SI维度得分低于非D型人格女生,但得分差异均无统计学意义(t=1.6110,-0.8945,P>0.05)。(2)在压力方面,D型人格医学生与非D型人格医学生BSSI总分均高于72分,均达到了压力较高的诊断标准,且差异有统计学意义(t=9.1076,P<0.05)。D型人格医学生在BSSI的学习压力、人际关系及临床实践3个因子得分均高于3分,非D型人格医学生在BSSI的学习压力、经济压力、人际关系及临床实践4个因子得分均高于3分,均达到了压力较高的诊断标准。D型人格医学生在BSSI的学习压力、人际关系及临床实践3个因子得分均高于非D型人格医学生,且在临床实践1个因子得分差异有统计学意义(t=0.0298,P<0.05);D型人格医学生在BSSI的经济压力1个因子得分低于非D型人格医学生,且得分差异由统计学意义(t=-2.1661,P<0.05)。(3)在心理健康方面,D型人格医学生在SCL-90的强迫、人际关系、抑郁、焦虑、恐怖及精神病性6个因子得分均高于非D型人格医学生,且在人际关系、抑郁、焦虑及恐怖4个因子得分差异有统计学意义(t=2.8026,2.4681,3.5364,2.5155,P<0.05);D型人格医学生在SCL-90的躯体化、敌对性及偏执3个因子得分低于非D型人格医学生,但得分差异均无统计学意义(t=-1.6568,-1.4248,-1.3721,P>0.05)。结论临床实习期间医学生总体面临较大压力,D型人格医学生自感压力要大于非D型人格医学生,且压力对D型人格医学生心理健康的影响要大于对非D型人格医学生的影响。
文摘[目的]探究催乳素受体(prolactin receptor,PRLR)基因InDel突变对绒山羊种群生长特性的影响。[方法]以陕北白绒山羊为研究对象,采用PCR扩增和测序技术法检测分析陕北白绒山羊PRLR基因的多态性,利用独立样本t检验和单因素方差法分析PRLR基因不同基因型与陕北白绒山羊生长性状之间的相关性。[结果]在所检测的1176只陕北白绒山羊群体中,PRLR基因第2内含子存在1个16 bp InDel突变,形成了纯合插入型(II)、杂合型(ID)与纯合缺失型(DD)3种基因型;在育成羊群体中,该InDel突变与生长性状无显著关联(P>0.05),在成年羊群体中,InDel突变与管围性状显著相关(P<0.05);在育成羊和成年羊全部群体中,InDel突变仍与管围性状显著相关(P<0.05)。[结论]PRLR基因16 bp InDel突变可能会对陕北白绒山羊生长发育产生显著影响,该位点可作为陕北白绒山羊辅助育种的候选分子标记。
文摘In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.
基金Supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(ZHD201205)the National Natural Science Foundation of China(61106103 and 61107031).
文摘The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowering(DIBL)under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide,and it is experimentally observed for short channel transistors.The enhanced DIBL effect manifests as the DIBL parameter increases with total dose.Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor.The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect,but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.
文摘Total ionizing dose effects of different transistor sizes in a 0.18µm technology are studied by 60Coγ-ray irradiation.Significant threshold voltage shift is observed for the narrow channel devices,which is called the radiation induced narrow channel effect(RINCE).A charge sharing model is introduced to understand the phenomenon.The devices'characteristic degradations after irradiation,such as threshold voltage shift,increase in on-state current under different drain biases and substrate biases,are discussed in detail.Radiation induced oxide trapped charge at the edges of shallow trench isolation plays an important role in the RINCE.Narrow channel devices are susceptible to the total ionizing dose effect.
