电控离子交换(Electrochemically switched ion exchange,ESIX)系统内对电极具有保持溶液电中性、增强提锂效果且使系统形成闭合回路的关键作用。在ESIX技术盐湖提锂过程中人们主要关注锂离子捕获电极,关于对电极的研究较少。而本文研...电控离子交换(Electrochemically switched ion exchange,ESIX)系统内对电极具有保持溶液电中性、增强提锂效果且使系统形成闭合回路的关键作用。在ESIX技术盐湖提锂过程中人们主要关注锂离子捕获电极,关于对电极的研究较少。而本文研究了不同类型对电极对ESIX系统提锂性能的影响。分别采用聚吡咯/导电炭黑/聚偏二氟乙烯(PPy/C/PVDF)、活性炭/导电炭黑/聚偏二氟乙烯(AC/C/PVDF)和石墨板电极作为ESIX系统中锰酸锂/导电炭黑/聚偏二氟乙烯(LiMn_(2)O_(4)/C/PVDF)提锂膜电极的对电极,考察了这3种ESIX系统在氯化物型高镁锂比模拟卤水(Mg/Li~50)中的提锂性能。结果表明,当PPy/C/PVDF作为对电极时可有效吸附卤水中Cl^(-),且ESIX系统提锂性能最优,Li^(+)吸附量为13.9 mg/g;当PPy/C/PVDF电极湿膜厚度增加至1 mm时,ESIX系统对Li^(+)的提取率可达44.2%,Li^(+)/Mg^(2+)分离因子可达56.82。因此,针对不同的阴离子型盐湖卤水设计匹配的对电极对ESIX技术在盐湖提锂领域的发展具有重要的理论指导意义。展开更多
Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesi...Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500℃.The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500℃ are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains.The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.59402009.
文摘Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500℃.The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500℃ are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains.The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.
