The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calc...The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model. The results obtained were discussed. The grown rates and thickness of oxidic layer on the intrinsic (Al x Ga 1- x ) y In 1- y P surface exposed in the atmosphere were studied. A linear dependence of oxidic layer thickness on the time was obtained.展开更多
文摘The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model. The results obtained were discussed. The grown rates and thickness of oxidic layer on the intrinsic (Al x Ga 1- x ) y In 1- y P surface exposed in the atmosphere were studied. A linear dependence of oxidic layer thickness on the time was obtained.
