The effect of a 0.9 nm Mo interlayer at the interface of Ti film deposited on a Si substrate on phase formation of TiSi2 during annealing has been studied by using transmission electron micro-diffraction technique. Wh...The effect of a 0.9 nm Mo interlayer at the interface of Ti film deposited on a Si substrate on phase formation of TiSi2 during annealing has been studied by using transmission electron micro-diffraction technique. When Ti/Mo/Si was an- nealed at low temperature as 550℃ for 30 mm in Ar ambient, a metastable phase. i.e., hexagonal C40 TiSi2, and the equilibrium phase. i.e., orthorhombic C54 TiSi2, were both detected. The experimental patterns of the C40 and C54 compare well with the simulated ones.展开更多
Annealing behavior, at different annealing temperatures, of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of sur -face of a Ti film was investigated by Rutherford baccscatter...Annealing behavior, at different annealing temperatures, of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of sur -face of a Ti film was investigated by Rutherford baccscattering spectrometry (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectrometry (EDS). In a Ti/Mo/Si structure, partially reacted film with layer struc- ture of Ti-rich silicide/TiSi2/(Mo, Ti)Si2 on a Si substrate was formed after 550℃ annealing for 30 min. The ratio of Mo to Ti in (Mo, Ti)Si2 layer decreases from ncar Si substrate upwards and becomes zero at about 20 nm away. In a Mo/Ti/Si structure, the surface Mo layer enhances the Si diffusion from the substrate during annealing. Mo bearing Ti rich silicide exists on the surface until 600℃ and then converts to (Mo, Ti)Si2 after 6500C annealing, and the atomic ratio of Mo to Ti decreases from the top surface into Ti silicide film, and becomes zero at about 30 nm away from the surface. In both cases of interface Mo and surface Mo layer, the atomic ratio of Mo to Ti in the region of (Mo, Ti)Si2 was found to be very low, with an average value of less than 0.2. Low content of Mo in Mo containing ternary sili.zide leads easily to the formation of the stable phase of C54 (Mo, Ti)Si2, which acts as a templatc for the formation of C54 TiSi2 beneath when Mo is deposited on the surface.展开更多
The influence of the high temperature processing on the strain stored in SiGe hetero-epilayer was studied by means of RBS/Channeling. Channeling angular scan along the ,< 110> axial direction in the (100) plane ...The influence of the high temperature processing on the strain stored in SiGe hetero-epilayer was studied by means of RBS/Channeling. Channeling angular scan along the ,< 110> axial direction in the (100) plane was used to characterize the tetragonal distortion in the SiGe strained layer. The strained crystal structure parameters were acquired by combining the determination of strain with the elasticity theory. It is shown that the strain stored in the SiGe epilayer has significantly change (relaxation factor from 0.023 to 0.84) after high temperature annealing. The potential strain relaxation mechanisms were discussed.展开更多
基金Partly Supported by the National Nature Science Foundation of China (No. 19910131370)
文摘The effect of a 0.9 nm Mo interlayer at the interface of Ti film deposited on a Si substrate on phase formation of TiSi2 during annealing has been studied by using transmission electron micro-diffraction technique. When Ti/Mo/Si was an- nealed at low temperature as 550℃ for 30 mm in Ar ambient, a metastable phase. i.e., hexagonal C40 TiSi2, and the equilibrium phase. i.e., orthorhombic C54 TiSi2, were both detected. The experimental patterns of the C40 and C54 compare well with the simulated ones.
基金Supported Partly by the National Natural Science Foundation (No. 19910131370)
文摘Annealing behavior, at different annealing temperatures, of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of sur -face of a Ti film was investigated by Rutherford baccscattering spectrometry (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectrometry (EDS). In a Ti/Mo/Si structure, partially reacted film with layer struc- ture of Ti-rich silicide/TiSi2/(Mo, Ti)Si2 on a Si substrate was formed after 550℃ annealing for 30 min. The ratio of Mo to Ti in (Mo, Ti)Si2 layer decreases from ncar Si substrate upwards and becomes zero at about 20 nm away. In a Mo/Ti/Si structure, the surface Mo layer enhances the Si diffusion from the substrate during annealing. Mo bearing Ti rich silicide exists on the surface until 600℃ and then converts to (Mo, Ti)Si2 after 6500C annealing, and the atomic ratio of Mo to Ti decreases from the top surface into Ti silicide film, and becomes zero at about 30 nm away from the surface. In both cases of interface Mo and surface Mo layer, the atomic ratio of Mo to Ti in the region of (Mo, Ti)Si2 was found to be very low, with an average value of less than 0.2. Low content of Mo in Mo containing ternary sili.zide leads easily to the formation of the stable phase of C54 (Mo, Ti)Si2, which acts as a templatc for the formation of C54 TiSi2 beneath when Mo is deposited on the surface.
基金Supported by the National Natural Sciences Foundation of China (10075072)
文摘The influence of the high temperature processing on the strain stored in SiGe hetero-epilayer was studied by means of RBS/Channeling. Channeling angular scan along the ,< 110> axial direction in the (100) plane was used to characterize the tetragonal distortion in the SiGe strained layer. The strained crystal structure parameters were acquired by combining the determination of strain with the elasticity theory. It is shown that the strain stored in the SiGe epilayer has significantly change (relaxation factor from 0.023 to 0.84) after high temperature annealing. The potential strain relaxation mechanisms were discussed.
