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Blue light emission from C^+ implanted SiO_2 films
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作者 zhao jun, yang gengqing, lin zixin, jiang binyao, zhou zuyao and liu xianghuaiion beam laboratory, shanghai institute of metallurgy, chinese academy of sciences, shanghai 200050, china 《Chinese Science Bulletin》 SCIE EI CAS 1997年第19期1670-1671,共2页
VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it poss... VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it possible that the conventional planar technology of sili-con may be used in optoelectronics devices directly. Moreover, it is also an ideal object 展开更多
关键词 SIO Blue light emission from C implanted SiO2 films
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