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Reduction and compensation of lattice stress in high energy P^+ and P+Sb implanted silicon
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作者 WU Yu-Guang ZHANG Tong-He +2 位作者 zhao shou-nan ZHU Zhong-Hua(Key Laboratary for Radiation Beam Technology and Materials Modification,Institute of Low Energy Nuclear Physics (Beijing Radiation Center), Beijing Normal University, Beijing 100875 South China Uni 《Nuclear Science and Techniques》 SCIE CAS CSCD 2000年第2期85-90,共6页
The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental result... The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×1013/cm2 is 2.2 times greater than at a dose of 3.6×1012/cm2. The stress decreases rapidly as the annealing time increases.It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6×1016/cm3, whereas the stress becomes positive when the concentration is greater than 6×16/cm3. The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1 ×1016/cm2, the stress is negative after annealing,and it is positive when the Sb dose is higher than 1×1016/cm2. The stress is close to zero for a Sb implantation dose of 1×1016/cm2. The best compensation dose of Sb to P implantation dose of 3×1016/cm2 is 1×1016/cm2. 展开更多
关键词 双重掺杂 半导体 缺陷 离子掺杂 硅晶格
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