Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the...Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σ_ ph ),and dark conductivity(σ_d),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,respectively.The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.展开更多
A structure-based microstrip passband filter with the center frequency of 2.6 GHz was put forward by using double-mode resonator based on defected ground structure （DGS） technology. A double-mode coupling resonator ...A structure-based microstrip passband filter with the center frequency of 2.6 GHz was put forward by using double-mode resonator based on defected ground structure （DGS） technology. A double-mode coupling resonator combined with DGS structure was used to achieve the resonance frequency and the filter size. CST microwave studio was used to optimize the attenuation performance to get the filter parameters. A structure-based passband filter was fabricated. Simulation is consistent with the measurement. Performance shows that the proposed filter could be suitable for the time division-long term devolution （TD-LTE） microwave systems at 2.6 GHz.展开更多
基金This workis supported by the State Key Development Programfor Basic Research of China ( Grant No. G2000028202 ,G2000028203)the Key Project of Education Bureau (Grant No.02167)the State Key Development Program(2002303261)
文摘Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σ_ ph ),and dark conductivity(σ_d),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,respectively.The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.
基金supported by the National Natural Science Foundation of China (61202399)
文摘A structure-based microstrip passband filter with the center frequency of 2.6 GHz was put forward by using double-mode resonator based on defected ground structure （DGS） technology. A double-mode coupling resonator combined with DGS structure was used to achieve the resonance frequency and the filter size. CST microwave studio was used to optimize the attenuation performance to get the filter parameters. A structure-based passband filter was fabricated. Simulation is consistent with the measurement. Performance shows that the proposed filter could be suitable for the time division-long term devolution （TD-LTE） microwave systems at 2.6 GHz.
