The 2D magnetophonon oscillatóry in GaAs-Al_(x)Ga_(1-x)As hetero-structure interface,grown by MBE,has been investigated by means of the second derivative of the magnetoresistance under high pulsed magnetic fields...The 2D magnetophonon oscillatóry in GaAs-Al_(x)Ga_(1-x)As hetero-structure interface,grown by MBE,has been investigated by means of the second derivative of the magnetoresistance under high pulsed magnetic fields up to 40T.,The fundamental magnetic field has been measured as 23.7T and the damping facterγ,2D electron effective mass m*for our sample are 1.58 and 0.0747m_(e),respectively.展开更多
文摘The 2D magnetophonon oscillatóry in GaAs-Al_(x)Ga_(1-x)As hetero-structure interface,grown by MBE,has been investigated by means of the second derivative of the magnetoresistance under high pulsed magnetic fields up to 40T.,The fundamental magnetic field has been measured as 23.7T and the damping facterγ,2D electron effective mass m*for our sample are 1.58 and 0.0747m_(e),respectively.
