The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing l...The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room temperature.The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.展开更多
基金Supported by the High Technology Research and Development Programme of China under Contract 863-307-15-3(6).
文摘The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room temperature.The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.