In this work,it is found that the compressive stress on the surface of cubic-BN(c-BN)film is all smaller than that inside c-BN film and after a longer period,the depositing matter mainly is of hexagonal-BN phase rathe...In this work,it is found that the compressive stress on the surface of cubic-BN(c-BN)film is all smaller than that inside c-BN film and after a longer period,the depositing matter mainly is of hexagonal-BN phase rather than c-BN phase,those just are the reason why a pure thicker c-BN film cannot,as yet,be obtained.Up to now the lowest IR peak position of 1004.7cm-1 detected from a broken and part delaminated c-BN film may be one close to the stressless c-BN.展开更多
We report a cubic boron nitride(c-BN)film with low stress.Infrared(IR)peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent ad...We report a cubic boron nitride(c-BN)film with low stress.Infrared(IR)peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion.Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase.It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride,hexagonal boron nitride,and wurtzic boron nitride.展开更多
A method of synthesizing cubic boron nitride(c-BN)films by the magnetron arc-discharge plasma ion plating was investigated.A nearly pure c-BN film was obtained by reacting boron vapor with high-density nitrogen ions,a...A method of synthesizing cubic boron nitride(c-BN)films by the magnetron arc-discharge plasma ion plating was investigated.A nearly pure c-BN film was obtained by reacting boron vapor with high-density nitrogen ions,and using hot cathode arc-discharge plasma in a parallel magnetic field around the substrate.The structure of the films obtained was characterized by using infrared absorption spectroscopy and x-ray diffraction analysis.After numerous experiments,the phase pattern of the bias vs the current in synthesizing c-BN was found.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.19774025Jilin Province Science and Technology Foundation.
文摘In this work,it is found that the compressive stress on the surface of cubic-BN(c-BN)film is all smaller than that inside c-BN film and after a longer period,the depositing matter mainly is of hexagonal-BN phase rather than c-BN phase,those just are the reason why a pure thicker c-BN film cannot,as yet,be obtained.Up to now the lowest IR peak position of 1004.7cm-1 detected from a broken and part delaminated c-BN film may be one close to the stressless c-BN.
基金Supported by the National Natural Science Foundation of China under Grant Nos.59831040 and 19774025the Jilin Province Science and Technology Foundation.
文摘We report a cubic boron nitride(c-BN)film with low stress.Infrared(IR)peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion.Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase.It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride,hexagonal boron nitride,and wurtzic boron nitride.
文摘A method of synthesizing cubic boron nitride(c-BN)films by the magnetron arc-discharge plasma ion plating was investigated.A nearly pure c-BN film was obtained by reacting boron vapor with high-density nitrogen ions,and using hot cathode arc-discharge plasma in a parallel magnetic field around the substrate.The structure of the films obtained was characterized by using infrared absorption spectroscopy and x-ray diffraction analysis.After numerous experiments,the phase pattern of the bias vs the current in synthesizing c-BN was found.
