Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process.The laser...Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process.The laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus waveguides.The ring diameter is 700 μm and the width of the waveguide is 3 μm.The output optical power-current(P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus waveguide.The threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 mA.In addition,the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot.展开更多
基金Supported by the National Natural Science Foundation of China (Grant No.60706035)National Basic Research Program of China (Grant No. 2003CB314901)
文摘Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process.The laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus waveguides.The ring diameter is 700 μm and the width of the waveguide is 3 μm.The output optical power-current(P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus waveguide.The threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 mA.In addition,the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot.
