The fabrication of nanodevices on the delicate membrane window of the TEM(transmission electron microscopy)chip has the risk of breakage failure,limiting in-depth research in this area.This work proposed a methodology...The fabrication of nanodevices on the delicate membrane window of the TEM(transmission electron microscopy)chip has the risk of breakage failure,limiting in-depth research in this area.This work proposed a methodology to address this issue,enabling secure in-situ transmission electron microscopic observation of many devices and materials that would otherwise be difficult to achieve.Combining semi-custom TEM chip design and front-side protected release technology,a variety of nanodevices were successfully fabricated onto the window membrane of the TEM chip and studied in situ.Moreover,the pressure tolerance of window membrane was investigated and enhanced with a reinforcing structure.As an example of typical applications,MoS;devices on the TEM chip have been fabricated and electron beam-induced gate modulation and irradiation damage effects,have been demonstrated.展开更多
基金supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200802)the National Natural Science Fundation of China (Grant No. 11890672)
文摘The fabrication of nanodevices on the delicate membrane window of the TEM(transmission electron microscopy)chip has the risk of breakage failure,limiting in-depth research in this area.This work proposed a methodology to address this issue,enabling secure in-situ transmission electron microscopic observation of many devices and materials that would otherwise be difficult to achieve.Combining semi-custom TEM chip design and front-side protected release technology,a variety of nanodevices were successfully fabricated onto the window membrane of the TEM chip and studied in situ.Moreover,the pressure tolerance of window membrane was investigated and enhanced with a reinforcing structure.As an example of typical applications,MoS;devices on the TEM chip have been fabricated and electron beam-induced gate modulation and irradiation damage effects,have been demonstrated.
