期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
High Hole Mobility Si/Si_(l-x)Ge_(x)/Si Heterostructure
1
作者 JIANG Ruolian LIU Jianlin +3 位作者 zheng Youdou zheng guozhen WEI Yayi SHEN Xuechu 《Chinese Physics Letters》 SCIE CAS CSCD 1994年第2期116-118,共3页
High mobility Si/Si_(l-x)Ge_(x)/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD(rapid radiant heating/very low pressure-CVD).Hole Hall mobilities as high as about 300cm^(2)/V.s(293 K)... High mobility Si/Si_(l-x)Ge_(x)/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD(rapid radiant heating/very low pressure-CVD).Hole Hall mobilities as high as about 300cm^(2)/V.s(293 K)and 7500cm^(2)/V.s(77K)have been obtained for heterostructures with x=0.3.The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated. 展开更多
关键词 Si/Si MOBILITY HETEROSTRUCTURE
下载PDF
Two-Dimensional Transport Properties of Germanium Bicrystal at Low Temperature
2
作者 XIA Yiben zheng guozhen +1 位作者 GUO Shaoling SUN Jinxi 《Chinese Physics Letters》 SCIE CAS CSCD 1992年第7期383-385,共3页
Two-dimensional properties of grain boundaries in germanium bicrystals are studied at liquid helium temperature ranging from 1.6 to 4.2 K.The experimental results indicate that the magnetoresistivity for 8°tilt a... Two-dimensional properties of grain boundaries in germanium bicrystals are studied at liquid helium temperature ranging from 1.6 to 4.2 K.The experimental results indicate that the magnetoresistivity for 8°tilt angle increases exponentially with the magnetic held intensity square in weak magnetic field and with the linear magnetic field intensity in strong magnetic field.The phenomena are explainable with the percolation theory. 展开更多
关键词 theory GRAIN MAGNETIC
下载PDF
ACCEPTOR LEVELS IN ZERO-GAP Hg_(1-x)Cd_(x) Te CRYSTAL
3
作者 LIANG Yong zheng guozhen TANG Dingyuan 《Chinese Physics Letters》 SCIE CAS 1986年第9期425-428,共4页
The anomalous dips A_(1)A_(2) of mobility of zero-gap Hg_(1-x)Cd_(x)Te in temperature range about 12K and 28K have been studied.The Hall coefficients vs.temperature are measured in high magnetic field.It shows that in... The anomalous dips A_(1)A_(2) of mobility of zero-gap Hg_(1-x)Cd_(x)Te in temperature range about 12K and 28K have been studied.The Hall coefficients vs.temperature are measured in high magnetic field.It shows that instead of the interband optical phonon scattering,the anomalous dip A_(2) is caused by the acceptor resonant state. 展开更多
关键词 field state RESONANT
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部