A separated absorption and multiplication GaN p–i–p–i–n avalanche photo-diode(APD)with a 25μm diameter mesa is proposed and demonstrated.Compared to the conventional p–i–n APD,the p–i–p–i–n structure reduce...A separated absorption and multiplication GaN p–i–p–i–n avalanche photo-diode(APD)with a 25μm diameter mesa is proposed and demonstrated.Compared to the conventional p–i–n APD,the p–i–p–i–n structure reduces the probability of premature micro-plasma breakdown,raises the gain from 30 to 400 and reduces the work voltage from 93 to 48 V.The temperature test is set on p–i–p–i–n APDs,and the positive coefficient of 30 mV/K shows that avalanche breakdown happens in the devices.The peak responsivity of p–i–p–i–n APDs is 0.11 A/W under a wavelength of 358 nm.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2011CB3019000the High Technology Research and Development Program of China under Grant Nos 2011AA03A112,2011AA03A106 and 2011AA03A105+1 种基金the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085the Open Foundation of Science and Technology on Surface Engineering Laboratory,Lanzhou Institute of Physics(BMK1002).
文摘A separated absorption and multiplication GaN p–i–p–i–n avalanche photo-diode(APD)with a 25μm diameter mesa is proposed and demonstrated.Compared to the conventional p–i–n APD,the p–i–p–i–n structure reduces the probability of premature micro-plasma breakdown,raises the gain from 30 to 400 and reduces the work voltage from 93 to 48 V.The temperature test is set on p–i–p–i–n APDs,and the positive coefficient of 30 mV/K shows that avalanche breakdown happens in the devices.The peak responsivity of p–i–p–i–n APDs is 0.11 A/W under a wavelength of 358 nm.
