CdS/CdTe solar cells with ZnTe/ZnTe： Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe：Cu buff...CdS/CdTe solar cells with ZnTe/ZnTe： Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe：Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe-Cu buffer layers affect the solar cell conversion efficiencv and its fill factor.展开更多
In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation...In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.展开更多
ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as ...ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.展开更多
基金the High Technology Research and Development Programme of China(No.2003AA513010)the National Natural Science Foundation of China(No.50079030).
文摘CdS/CdTe solar cells with ZnTe/ZnTe： Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe：Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe-Cu buffer layers affect the solar cell conversion efficiencv and its fill factor.
基金the Hi-Tech Research and Development Program of China (Grant No. 2003AA513010)the Science and Technology Program of Sichuan Province, China (Grant No. 05GG021-003-3)
文摘In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.
基金Supported by the National High Technology ResearchDevelopment Program (863 Program)the Tenth Five-year Plan of China (Grant No. 2003AA513010)
文摘ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.
