Rapid thermal annealing induced acceptor levels and their annealing behavior in semi-insulating GaAs were investigated using the photoluminescence technique.Results suggest that the introduction of excess of Vg„and Ga...Rapid thermal annealing induced acceptor levels and their annealing behavior in semi-insulating GaAs were investigated using the photoluminescence technique.Results suggest that the introduction of excess of Vg„and Gax»related acceptors might lead to thermal conversion of GaAs wafers.展开更多
文摘Rapid thermal annealing induced acceptor levels and their annealing behavior in semi-insulating GaAs were investigated using the photoluminescence technique.Results suggest that the introduction of excess of Vg„and Gax»related acceptors might lead to thermal conversion of GaAs wafers.