Ion implantation xvas used to bring silicon atoms into chemical vapor deposition SiO_(2).Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples.Thermal annealing beha...Ion implantation xvas used to bring silicon atoms into chemical vapor deposition SiO_(2).Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples.Thermal annealing behavior of the photoluminescence ivas studied.The possible origin of the photoluminescence is discussed.展开更多
基金Supported in part by State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams of Dalian Polytechnic University.
文摘Ion implantation xvas used to bring silicon atoms into chemical vapor deposition SiO_(2).Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples.Thermal annealing behavior of the photoluminescence ivas studied.The possible origin of the photoluminescence is discussed.
