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Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions 被引量:1
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作者 WANG Zhan-guo LIN Lan-ying +4 位作者 LI Cheng-ji zhong xing-ru LI Yun-yan WAN Shou-ke SUN Hong 《Chinese Physics Letters》 SCIE CAS CSCD 1996年第7期553-556,共4页
A technologically important undoped semi-insulating(SI)GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration descr... A technologically important undoped semi-insulating(SI)GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously.The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity. 展开更多
关键词 insulating DEFECT CONFIGURATION
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