基于无损脑刺激的情绪调节干预

既往研究积累了无损脑刺激(non-invasive brain stimulation,NIBS)技术干预情绪调节以改善负性情绪的大量证据。总结NIBS的情绪调节干预效果和适用范围对于丰富情绪调节理论、促进转化研究有重要意义。通过综述文献可发现NIBS能有效影响相关脑区(例如前额叶)的活动,从而干预外显与内隐情绪调节过程;通过改善情绪调节功能,NIBS具有改善精神障碍症状的潜在可能性。此领域尚需解决的问题如下:首先,研究间异质性太强导致结果不一;其次,情绪调节干预过程的脑神经环路机制仍不明确,情绪调节的衡量指标单一。此外,以往NIBS方案存在定位精度不高、单时段效果微弱、现有方案难以满足新需要,以及具有一定的副作用等问题。据此,未来有必要全面定量总结现有文献,结合神经导航技术确定最优靶点,考察干预状态下外显/内隐情绪调节的脑神经环路改变,并从主观体验−生理指标−神经特征多层面评估NIBS干预效果。未来还可采用多靶点NIBS方案,或结合超扫描、神经反馈等技术以提高研究效度,为相关的转化研究和临床提供启示。

EFFECT OF MAGNETIC FIELD ON THE CHARACTERISTIC OF SILICON SINGLE CRYSTAL

The growth striation,the resistant homogeneity,and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski(MCZ)and Czochralski growth methods(CZ)were investigated.The oxygen concentration in MCZ silicon is more uniform and controllable.It is concluded that the Magnetic Czochralski method is an effective method to improve the quality of silicon single crystal.

THE STUDY ON GETTERING MECHANISM OF DOUBLE-GETTERING TECHNIQUE

The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the continuous gettering ability were investigated.It was pointed out that the gettering functions of phosphorus and dislocation loops result in extremely strong gettering effectiveness of DGT.

THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE

Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis and spread resistance.Phosphorus profile in these wafers was measured.And the effect of phosphorus on defects and resistivity was determined.