Using novel ideas for the fabrication of epitaxial graphene （EG） on SiC, two forms of graphene termed as vertical aligned gra- phene sheets （VAGS） and graphene covered SiC powder （GCSP） were derived, respectivel...Using novel ideas for the fabrication of epitaxial graphene （EG） on SiC, two forms of graphene termed as vertical aligned gra- phene sheets （VAGS） and graphene covered SiC powder （GCSP） were derived, respectively, from SiC slices and SiC powder, aimed for applications in energy storage and photocatalysis. Herein, the fabrication procedures, morphology characteristics, some intrinsic physical properties and performances for applications in field effect transistor （FET） and cold cathode field emission source are revealed and analyzed based on the graphene materials. The EG on a 2-inch SiC （0001） showed an average sheet resistance about 720 D,/~5 with a non-uniformity 7.2%. The FETs fabricated on the EG possessed a cutoff frequency 80 GHz. Based on the VAGS derived from a completely carbonized SiC slice, a magnetic phase diagram of graphene with irregu- lar zigzag edges is also reported.展开更多
The legends of the following Figures should be as follows： Figure 3 AFM morphologies and Raman spectra of a EG on a 2 inch SiC （0001） measured at five representative regions. （a） AFM Morphology reproduced from r...The legends of the following Figures should be as follows： Figure 3 AFM morphologies and Raman spectra of a EG on a 2 inch SiC （0001） measured at five representative regions. （a） AFM Morphology reproduced from ref. [14] with permission from Science China Press and Springer publishing, （b） Ra- man spectra.展开更多
基金supported by the Ministry of Science and Technology of China(Grant No.2011CB932700)the Knowledge Innovation Project of Chinese Academy of Science(Grant No.KJCX2-YW-W22)the National Natural Science Foundation of China(Grant Nos.51272279 and51072223)
文摘Using novel ideas for the fabrication of epitaxial graphene （EG） on SiC, two forms of graphene termed as vertical aligned gra- phene sheets （VAGS） and graphene covered SiC powder （GCSP） were derived, respectively, from SiC slices and SiC powder, aimed for applications in energy storage and photocatalysis. Herein, the fabrication procedures, morphology characteristics, some intrinsic physical properties and performances for applications in field effect transistor （FET） and cold cathode field emission source are revealed and analyzed based on the graphene materials. The EG on a 2-inch SiC （0001） showed an average sheet resistance about 720 D,/~5 with a non-uniformity 7.2%. The FETs fabricated on the EG possessed a cutoff frequency 80 GHz. Based on the VAGS derived from a completely carbonized SiC slice, a magnetic phase diagram of graphene with irregu- lar zigzag edges is also reported.
文摘The legends of the following Figures should be as follows： Figure 3 AFM morphologies and Raman spectra of a EG on a 2 inch SiC （0001） measured at five representative regions. （a） AFM Morphology reproduced from ref. [14] with permission from Science China Press and Springer publishing, （b） Ra- man spectra.
