Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell,in which an ultrathin Al_(2)O_(3) film as an insulating layer was deposited onto the CH_(3)NH...Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell,in which an ultrathin Al_(2)O_(3) film as an insulating layer was deposited onto the CH_(3)NH_(3)PbI_(3) by atomic layer deposition technology.The light-to-electricity conversion efficiency of the devices is significantly enhanced from 3.30%to 5.07%.Further the impedance spectrum reveals that this insulating layer sustains part of the positive bias applied in the absorber region close to the back contact and decreases the carrier transport barrier,thus promoting transportation of carriers.展开更多
铁酸铋-钛酸钡(Bi Fe O3-Ba Ti O3,BF-BT)基陶瓷由于具有高的居里温度TC和大的自发极化强度Ps,以及较高的压电系数d33,近年来受到了广泛关注,且被认为是一种有潜力替代铅基压电陶瓷的无铅压电陶瓷体系.本文主要综述近几年来国内外有关BF...铁酸铋-钛酸钡(Bi Fe O3-Ba Ti O3,BF-BT)基陶瓷由于具有高的居里温度TC和大的自发极化强度Ps,以及较高的压电系数d33,近年来受到了广泛关注,且被认为是一种有潜力替代铅基压电陶瓷的无铅压电陶瓷体系.本文主要综述近几年来国内外有关BF-BT基陶瓷的相结构和压电性能,以及磁性能等方面的研究进展和动向,并尝试分析了该陶瓷体系在实用化的道路上存在的迫切需要解决的问题.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 21173260,51072221 and 91233202the National Basic Research Program of China under Grant Nos 2012CB932903 and 2012CB932904the Knowledge Innovation Program of the Chinese Academy of Sciences.
文摘Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell,in which an ultrathin Al_(2)O_(3) film as an insulating layer was deposited onto the CH_(3)NH_(3)PbI_(3) by atomic layer deposition technology.The light-to-electricity conversion efficiency of the devices is significantly enhanced from 3.30%to 5.07%.Further the impedance spectrum reveals that this insulating layer sustains part of the positive bias applied in the absorber region close to the back contact and decreases the carrier transport barrier,thus promoting transportation of carriers.
文摘铁酸铋-钛酸钡(Bi Fe O3-Ba Ti O3,BF-BT)基陶瓷由于具有高的居里温度TC和大的自发极化强度Ps,以及较高的压电系数d33,近年来受到了广泛关注,且被认为是一种有潜力替代铅基压电陶瓷的无铅压电陶瓷体系.本文主要综述近几年来国内外有关BF-BT基陶瓷的相结构和压电性能,以及磁性能等方面的研究进展和动向,并尝试分析了该陶瓷体系在实用化的道路上存在的迫切需要解决的问题.