为了解决光伏发电和负载的随机性、间接性造成的直流母线电压波动和系统稳定运行的问题,依据光储直流微电网系统内各变换器的控制策略将系统内运行分为六种工作模式使各变换器协调运行,通过直流母线电压值和储能模块的SOC(State of Char...为了解决光伏发电和负载的随机性、间接性造成的直流母线电压波动和系统稳定运行的问题,依据光储直流微电网系统内各变换器的控制策略将系统内运行分为六种工作模式使各变换器协调运行,通过直流母线电压值和储能模块的SOC(State of Charge)实现各变换器工作模式的平滑切换,保证系统的稳定运行;利用超级电容和蓄电池组成混合储能模块,用超级电容电流环补偿蓄电池电流环误差,提高系统的动态响应速度。仿真验证了该控制策略的有效性。展开更多
Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD a...Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD and the bending strength of ultra-thin chips under different grinding parameters. In this study, SSD including amorphization and dislocation is observed using a transmission electron microscope. Theoretical predictions of the SSD depth induced by different processing parameters are in good agreement with experimental data. The main reasons for SSD depth increase include the increase of grit size, the acceleration of feed rate, and the slowdown of wheel rotation speed. Three-point bending test is adopted to measure the bending strength of ultra-thin chips processed by different grinding conditions. The results show that increasing wheel rotation speed and decreasing grit size and feed rate will improve the bending strength of chips, due to the reduction of SSD depth. Wet etching and chemical mechanical polishing(CMP) are applied respectively to remove the SSD induced by grinding, and both contribute to providing a higher bending strength, but in comparison, CMP works better due to a smooth surface profile. This research aims to provide some guidance for optimizing the grinding process and fabricating ultra-thin chips with higher bending strength.展开更多
文摘为了解决光伏发电和负载的随机性、间接性造成的直流母线电压波动和系统稳定运行的问题,依据光储直流微电网系统内各变换器的控制策略将系统内运行分为六种工作模式使各变换器协调运行,通过直流母线电压值和储能模块的SOC(State of Charge)实现各变换器工作模式的平滑切换,保证系统的稳定运行;利用超级电容和蓄电池组成混合储能模块,用超级电容电流环补偿蓄电池电流环误差,提高系统的动态响应速度。仿真验证了该控制策略的有效性。
基金supported by the National Natural Science Foundation of China (Grant Nos. U20A6001, 11625207, 11902292, and 11921002)the Zhejiang Province Key Research and Development Project (Grant Nos.2019C05002, 2020C05004, and 2021C01183)。
文摘Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD and the bending strength of ultra-thin chips under different grinding parameters. In this study, SSD including amorphization and dislocation is observed using a transmission electron microscope. Theoretical predictions of the SSD depth induced by different processing parameters are in good agreement with experimental data. The main reasons for SSD depth increase include the increase of grit size, the acceleration of feed rate, and the slowdown of wheel rotation speed. Three-point bending test is adopted to measure the bending strength of ultra-thin chips processed by different grinding conditions. The results show that increasing wheel rotation speed and decreasing grit size and feed rate will improve the bending strength of chips, due to the reduction of SSD depth. Wet etching and chemical mechanical polishing(CMP) are applied respectively to remove the SSD induced by grinding, and both contribute to providing a higher bending strength, but in comparison, CMP works better due to a smooth surface profile. This research aims to provide some guidance for optimizing the grinding process and fabricating ultra-thin chips with higher bending strength.
