We report a cubic boron nitride(c-BN)film with low stress.Infrared(IR)peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent ad...We report a cubic boron nitride(c-BN)film with low stress.Infrared(IR)peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion.Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase.It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride,hexagonal boron nitride,and wurtzic boron nitride.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos.59831040 and 19774025the Jilin Province Science and Technology Foundation.
文摘We report a cubic boron nitride(c-BN)film with low stress.Infrared(IR)peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion.Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase.It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride,hexagonal boron nitride,and wurtzic boron nitride.
