The performance of the oxide-confined surface-relief(SR)structure vertical-cavity surface-emitting laser(VCSEL)is simulated and analyzed by using the three-dimensional finite-difference time-domain(FDTD)method.The imp...The performance of the oxide-confined surface-relief(SR)structure vertical-cavity surface-emitting laser(VCSEL)is simulated and analyzed by using the three-dimensional finite-difference time-domain(FDTD)method.The impacts of the device structure parameters on the far-field characteristics are researched.A single-fundamental-mode SR VCSEL with an oxide-aperture of 15μm is designed and produced.The single-mode power of the VCSEL is 5 mW,the threshold current is 2.5 mA,far-field divergent angles range from 7.8°to 10.8°and the side-mode suppression ratio is over 30 dB.The optical and electrical properties of the device are in agreement with the results of FDTD simulation,which shows that the SR technology can effectively suppress the higher-order-mode lasing,and make the SR VCSEL work in a single mode under a larger oxide aperture.展开更多
A new structure of high-brightness light-emitting diodes(LED)is experimentally demonstrated.The thin window layer is composed of a 300-nm-thick indium-tin-oxide layer and a 500-nm-thick GaP layer for both current spre...A new structure of high-brightness light-emitting diodes(LED)is experimentally demonstrated.The thin window layer is composed of a 300-nm-thick indium-tin-oxide layer and a 500-nm-thick GaP layer for both current spreading and light anti-reflection.The two coupled distributed Bragg reflectors(DBRs)with one for reflecting normal incidence light and the other for reflecting inclined incidence light which is emitted to the GaAs substrate are employed in the LED fabrication.The coupled DBRs in the LED can provide high reflectivity with wide-angle reflection.The efficiency-enhanced AlGaInP LED has the luminance intensity increase of more than 50%compared with conventional LEDs and high reliability with the saturation current 130 mA.展开更多
基金National High Technology Research and Development Program of China(No.2015AA033305)National Key Reserach and Development Program of China(Nos.2017YFB0402800,2017YFB0402803)。
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2008AA03Z402the National Natural Science Foundation of China under Grant No 61076044the Natural Science Foundation of Beijing under Grant Nos 4092007,4102003 and 4112006.
文摘The performance of the oxide-confined surface-relief(SR)structure vertical-cavity surface-emitting laser(VCSEL)is simulated and analyzed by using the three-dimensional finite-difference time-domain(FDTD)method.The impacts of the device structure parameters on the far-field characteristics are researched.A single-fundamental-mode SR VCSEL with an oxide-aperture of 15μm is designed and produced.The single-mode power of the VCSEL is 5 mW,the threshold current is 2.5 mA,far-field divergent angles range from 7.8°to 10.8°and the side-mode suppression ratio is over 30 dB.The optical and electrical properties of the device are in agreement with the results of FDTD simulation,which shows that the SR technology can effectively suppress the higher-order-mode lasing,and make the SR VCSEL work in a single mode under a larger oxide aperture.
基金by the National High-Technology Research and Development Program of China under Grant No 2006AA03A121the National Basic Research Program of China under Grant No 2006CB604902.
文摘A new structure of high-brightness light-emitting diodes(LED)is experimentally demonstrated.The thin window layer is composed of a 300-nm-thick indium-tin-oxide layer and a 500-nm-thick GaP layer for both current spreading and light anti-reflection.The two coupled distributed Bragg reflectors(DBRs)with one for reflecting normal incidence light and the other for reflecting inclined incidence light which is emitted to the GaAs substrate are employed in the LED fabrication.The coupled DBRs in the LED can provide high reflectivity with wide-angle reflection.The efficiency-enhanced AlGaInP LED has the luminance intensity increase of more than 50%compared with conventional LEDs and high reliability with the saturation current 130 mA.
