Bandgap tuning of the InGaAsP/InP multiple quantum well(MQW)laser structure by the impurity-free vacancy diffusion(IFVD)is investigated using photoluminescence.It has been demonstrated that the effects of the plasma b...Bandgap tuning of the InGaAsP/InP multiple quantum well(MQW)laser structure by the impurity-free vacancy diffusion(IFVD)is investigated using photoluminescence.It has been demonstrated that the effects of the plasma bombardment to the sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure.The reliability of the IFVD technique,particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer,has been discussed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69786001“New Star”program for science and technology in Beijing(Contract No.952870300).
文摘Bandgap tuning of the InGaAsP/InP multiple quantum well(MQW)laser structure by the impurity-free vacancy diffusion(IFVD)is investigated using photoluminescence.It has been demonstrated that the effects of the plasma bombardment to the sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure.The reliability of the IFVD technique,particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer,has been discussed.
