A high-energy shift of the band-band recombination has been observed tn photoluminescence spectra of the strained InP layer grown on GaAs substrate.The InP layer is under biaxial compressive strain at temperatures bel...A high-energy shift of the band-band recombination has been observed tn photoluminescence spectra of the strained InP layer grown on GaAs substrate.The InP layer is under biaxial compressive strain at temperatures below the growth temperaiure,because the thermal expansion coefficient of InP is smaller than that of GaAs,The strain value determined by the energy shift of the bandedge peak is in good agreement with the calculated thermal strain.A band to carbon acceptor recombination is also identified.展开更多
Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subba...Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers,which has first derivative functional lineshapes.By fitting the experimental spectra,an unusual transition coming from the interfaces in MQWs was observed.展开更多
An unusual emission-I line has been observed in the photoluminescence spectra of MBE GaAs/AlAs MQW at 4.2K.Its half width is 6.5-9meV with peak energy Located between the near band transition and the free electrons to...An unusual emission-I line has been observed in the photoluminescence spectra of MBE GaAs/AlAs MQW at 4.2K.Its half width is 6.5-9meV with peak energy Located between the near band transition and the free electrons to carbon acceptors transition in bulk GaAs.The peak energy increases roughly linearly with the logarithm of the excitation power.The emission intensity decreases with the increase of temperature and disappears at about 15K.展开更多
Avehicular ad hoc network （VANET） is a packet-switched network, consisting of mobile communication nodes mounted on vehicles, with very limited or no infrastructure support [1]. It supports communications among near...Avehicular ad hoc network （VANET） is a packet-switched network, consisting of mobile communication nodes mounted on vehicles, with very limited or no infrastructure support [1]. It supports communications among nearby vehicles,展开更多
文摘A high-energy shift of the band-band recombination has been observed tn photoluminescence spectra of the strained InP layer grown on GaAs substrate.The InP layer is under biaxial compressive strain at temperatures below the growth temperaiure,because the thermal expansion coefficient of InP is smaller than that of GaAs,The strain value determined by the energy shift of the bandedge peak is in good agreement with the calculated thermal strain.A band to carbon acceptor recombination is also identified.
文摘Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers,which has first derivative functional lineshapes.By fitting the experimental spectra,an unusual transition coming from the interfaces in MQWs was observed.
文摘An unusual emission-I line has been observed in the photoluminescence spectra of MBE GaAs/AlAs MQW at 4.2K.Its half width is 6.5-9meV with peak energy Located between the near band transition and the free electrons to carbon acceptors transition in bulk GaAs.The peak energy increases roughly linearly with the logarithm of the excitation power.The emission intensity decreases with the increase of temperature and disappears at about 15K.
文摘Avehicular ad hoc network （VANET） is a packet-switched network, consisting of mobile communication nodes mounted on vehicles, with very limited or no infrastructure support [1]. It supports communications among nearby vehicles,
