The electrical characteristics of GaN schottky diode with and without the interfacial oxides are compared in this paper. The influence of interfacial oxides on the electrical characteristics of the schottky diodes has...The electrical characteristics of GaN schottky diode with and without the interfacial oxides are compared in this paper. The influence of interfacial oxides on the electrical characteristics of the schottky diodes has been confirmed by the I-V,C-V measures. We find the barrier height have a reduction of 0.05 eV^0.1 eV. There is an interfacial insulating oxide with the thickness of 0.05 nm^0.1 nm after conventional cleaning. Either the forward or the backward currents increase. The backward punch through voltages are reduced to 50% and the capacitances have increased by 100%.展开更多
The crystal quality of p-GaN film depends on the stress-strain during the process of material growth at a certain extent. A smooth high-quality GaN epitaxial layer was grown on sapphire substrate using standard low-te...The crystal quality of p-GaN film depends on the stress-strain during the process of material growth at a certain extent. A smooth high-quality GaN epitaxial layer was grown on sapphire substrate using standard low-temperature(LT) buffer layer by MOCVD. And by testing analysis of correlative experiments,we found that the stress-strain of p-type GaN could be changed by annealing,enhancing the crystal quality.展开更多
The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si(1×1014 cm...The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si(1×1014 cm-2, 1×1015 cm-2 or 1×1016 cm-2, 100 keV) and following annealed by rapid thermal anneal(RTA) at 1 000 ℃ or 1 100 ℃ for 60 s. High resolution X-ray diffractometer(HRXRD) measurement reveals that the damage peak induced by the implantation appears and increases with the rise of the impurity dose, expanding the crystal lattice. The absolute value of biaxial strain decreases with the increase of the annealing temperature for the same sample. RT-Hall test reveals that the sample annealed at 1 100 ℃ acquires higher mobility and higher carrier density than that annealed at 1 000 ℃, which reflects that the residual strain(or residual stress) is the main scattering factor. And the sample C3(1×1016 cm-2 and annealed at 1 100 ℃) acquires the best electronic characteristic with the carrier density of 3.25×1019 cm-3 and the carrier mobility of 31 cm2/(V·s).展开更多
基金The National Natural Science Foundation of China(G0501030160576007)
文摘The electrical characteristics of GaN schottky diode with and without the interfacial oxides are compared in this paper. The influence of interfacial oxides on the electrical characteristics of the schottky diodes has been confirmed by the I-V,C-V measures. We find the barrier height have a reduction of 0.05 eV^0.1 eV. There is an interfacial insulating oxide with the thickness of 0.05 nm^0.1 nm after conventional cleaning. Either the forward or the backward currents increase. The backward punch through voltages are reduced to 50% and the capacitances have increased by 100%.
文摘The crystal quality of p-GaN film depends on the stress-strain during the process of material growth at a certain extent. A smooth high-quality GaN epitaxial layer was grown on sapphire substrate using standard low-temperature(LT) buffer layer by MOCVD. And by testing analysis of correlative experiments,we found that the stress-strain of p-type GaN could be changed by annealing,enhancing the crystal quality.
文摘The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si(1×1014 cm-2, 1×1015 cm-2 or 1×1016 cm-2, 100 keV) and following annealed by rapid thermal anneal(RTA) at 1 000 ℃ or 1 100 ℃ for 60 s. High resolution X-ray diffractometer(HRXRD) measurement reveals that the damage peak induced by the implantation appears and increases with the rise of the impurity dose, expanding the crystal lattice. The absolute value of biaxial strain decreases with the increase of the annealing temperature for the same sample. RT-Hall test reveals that the sample annealed at 1 100 ℃ acquires higher mobility and higher carrier density than that annealed at 1 000 ℃, which reflects that the residual strain(or residual stress) is the main scattering factor. And the sample C3(1×1016 cm-2 and annealed at 1 100 ℃) acquires the best electronic characteristic with the carrier density of 3.25×1019 cm-3 and the carrier mobility of 31 cm2/(V·s).
