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Structural and photocatalytic properties of TiO_2 films fabricated on silicon substrates by MOCVD method 被引量:3
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作者 YANGJia-long LIYing +3 位作者 WANGFu zuoliang Gu-ChulYi WongYongChoi 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2005年第1期146-151,共6页
Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 ... Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 films were characterized with FE\|SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous OrangeⅡ. And UV VIS photospectrometer was used for checking the absorption characteristics and photocatalytic degradation activity. The crystalline and structural properties of TiO 2 film had crucial influences on the photodegradation efficiency. For MOCVD in situ deposited films on Si substrates, the photoactivities varied following a shape of “M': at lower(350℃), middle(500℃) and higher(800℃) temperature of deposition, relative lower photodegradation activities were observed. At 400℃ and 700℃ of deposition, relative higher efficiencies of degradation were obtained, because one predominant crystallite orientation could be obtained as deposition at the temperature of two levels, especially a single anatase crystalline TiO 2 film could be obtained at 700℃. 展开更多
关键词 MOCVD photocatalystic degradation Silicon(100) Silicon(111)
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Fabrication and Photocatalytic Characteristics of TiO_2 Films on Silicon Substrates
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作者 YANGJia-long WANGFu +2 位作者 zuoliang YIGu-chul CHOIWong-yong 《Wuhan University Journal of Natural Sciences》 EI CAS 2005年第3期581-586,共6页
Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposit... Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposited TiO_2 films have been characterized withField emission scanning electron microscopy (FE-SEM), X ray diffraction (XRD) and atomic forcemicroscopy (AFM). The photocatalytic properties were investigated by decomposition of aqueous orangeII. The crystalline and structural propertiesof TiO_2 film had crucial influences on thephotodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivitiesvaried following a shape of 'M': At lower (350 °C ) middle (500 °C) and higher (800 °C)temperature of deposition, relative lower photodegradation activities have been observed. At 400 °Cand 700 'C of deposition, relative higher efficiencies of degradation have been obtained, becauseone predominant crystallite orientation could be obtained as deposition at those two temperatures,especially a single anatase crystalline TiO_2 film could be obtained at 700 °C growth. 展开更多
关键词 MOCVD photocatalystic degradation silicon (100)
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