Background: Mycosis Fungoides (MF) is the most common and indolent form of Cutaneuse T-cell Lymphomas (CTCL), that usually occurs in old adults. Objectives: To determine epidemiologic features and patients characteris...Background: Mycosis Fungoides (MF) is the most common and indolent form of Cutaneuse T-cell Lymphomas (CTCL), that usually occurs in old adults. Objectives: To determine epidemiologic features and patients characteristics of MF in Isfahan (Iran). Methods: We performed a retrospective study in MF clinic of alzahra hospital that is the main center for treatment of MF patients in Isfahan (Iran) and evaluated clinicopathologic features. Results: In 3 years 25 patients were referred to Alzahra MF clinic. 18 patients diagnosed as MF. Seven (38.9%) patients were male and 11 (61.1%) were female with male to female ratio of 1:1.57. The mean age of patients was 41.06 years. 88.9% of our patients were in stages ΙA and ΙB. Conclusion: Most of our patients presented in early stages that were similar to other studies, while male: female ratio is different from other studies.展开更多
Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral region.Despite progress,the role of pattern geometry and growth p...Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral region.Despite progress,the role of pattern geometry and growth parameters on the composition,microstructure,and optical properties of InGaAs nanowires is still unresolved.Here,we present an optimised growth parameter window to achieve highly uniform In1-xGaxAs nanowire arrays on GaAs(111)B substrate over an extensive range of Ga concentrations,from 0.1 to 0.91,by selective-area metal-organic vapor-phase epitaxy.We observe that the Ga content always increases with decreasing In/(Ga+In)precursor ratio and group V flow rate and increasing growth temperature.The increase in Ga content is supported by a blue shift in the photoluminescence peak emission.The geometry of the nanowire arrays also plays an important role in the resulting composition.Notably,increasing the nanowire pitch size from 0.6 to 2μm in a patterned array shifts the photoluminescence peak emission by up to 120 meV.Irrespective of these growth and geometry parameters,the Ga content determines the crystal structure,resulting in a predominantly wurtzite structure for xGa≤0.3 and a predominantly zinc blende phase for xGa≥0.65.These insights on the factors controlling the composition of InGaAs nanowires grown by a scalable catalyst-free approach provide directions for engineering nanowires as functional components of future optoelectronic devices.展开更多
文摘Background: Mycosis Fungoides (MF) is the most common and indolent form of Cutaneuse T-cell Lymphomas (CTCL), that usually occurs in old adults. Objectives: To determine epidemiologic features and patients characteristics of MF in Isfahan (Iran). Methods: We performed a retrospective study in MF clinic of alzahra hospital that is the main center for treatment of MF patients in Isfahan (Iran) and evaluated clinicopathologic features. Results: In 3 years 25 patients were referred to Alzahra MF clinic. 18 patients diagnosed as MF. Seven (38.9%) patients were male and 11 (61.1%) were female with male to female ratio of 1:1.57. The mean age of patients was 41.06 years. 88.9% of our patients were in stages ΙA and ΙB. Conclusion: Most of our patients presented in early stages that were similar to other studies, while male: female ratio is different from other studies.
文摘Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral region.Despite progress,the role of pattern geometry and growth parameters on the composition,microstructure,and optical properties of InGaAs nanowires is still unresolved.Here,we present an optimised growth parameter window to achieve highly uniform In1-xGaxAs nanowire arrays on GaAs(111)B substrate over an extensive range of Ga concentrations,from 0.1 to 0.91,by selective-area metal-organic vapor-phase epitaxy.We observe that the Ga content always increases with decreasing In/(Ga+In)precursor ratio and group V flow rate and increasing growth temperature.The increase in Ga content is supported by a blue shift in the photoluminescence peak emission.The geometry of the nanowire arrays also plays an important role in the resulting composition.Notably,increasing the nanowire pitch size from 0.6 to 2μm in a patterned array shifts the photoluminescence peak emission by up to 120 meV.Irrespective of these growth and geometry parameters,the Ga content determines the crystal structure,resulting in a predominantly wurtzite structure for xGa≤0.3 and a predominantly zinc blende phase for xGa≥0.65.These insights on the factors controlling the composition of InGaAs nanowires grown by a scalable catalyst-free approach provide directions for engineering nanowires as functional components of future optoelectronic devices.
