TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under d...TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp^ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp^ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp^2C–C and sp^3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.展开更多
The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter(LC-16 type) by implanting of 190-keV Ar ions into Si to ...The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter(LC-16 type) by implanting of 190-keV Ar ions into Si to 3×1016 atoms/cm2,followed by Rutherford backscattering spectroscopy(RBS) and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of <5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.展开更多
BiFeO3 is a multiferroic material with physical properties very sensitive to its stoichiometry.BiFeO3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and fina...BiFeO3 is a multiferroic material with physical properties very sensitive to its stoichiometry.BiFeO3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing schemes.X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface morphologies.Using Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO3 thin films annealed at 100？C–650？C.The results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO3,whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10^-5 A/cm^2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO3 thin films annealed at high temperature.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11375135 and 11275141)International Cooperation Program of the Ministry of Science and Technology of China(No.2015DFR00720)Fundamental Research Funds for the Central Universities
文摘TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp^ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp^ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp^2C–C and sp^3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.
基金supported by the National Natural Science Foundation of China(Nos.11405117 and 11205116)International Cooperation Program of the Ministry of Science and Technology of China(No.2015DFR00720)
文摘The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter(LC-16 type) by implanting of 190-keV Ar ions into Si to 3×1016 atoms/cm2,followed by Rutherford backscattering spectroscopy(RBS) and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of <5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11605103,11405117,and 11747074)the Guangdong Provincial Natural Science Foundation,China(Grant Nos.2014A030307008 and 2016A030313670)the Guangdong Provincial Science and Technology Planning Project,China(Grant Nos.2016A010103041 and 2017A010103025)
文摘BiFeO3 is a multiferroic material with physical properties very sensitive to its stoichiometry.BiFeO3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing schemes.X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface morphologies.Using Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO3 thin films annealed at 100？C–650？C.The results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO3,whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10^-5 A/cm^2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO3 thin films annealed at high temperature.
