Flexible wearable batteries are widely used in smartwatches, foldable phones, and fitness trackers due to their thinness and small size. Zinc-based batteries have the advantages of low cost, high safety, and ecofriend...Flexible wearable batteries are widely used in smartwatches, foldable phones, and fitness trackers due to their thinness and small size. Zinc-based batteries have the advantages of low cost, high safety, and ecofriendliness, which are considered to be the best alternative to flexible lithium-ion batteries(LIBs).Therefore, wearable flexible zinc-ion batteries(FZIBs) have attracted considerable interest as a promising energy storage device. Electrospun nanofibers(ESNFs) have great potential for application in wearable FZIBs due to their low density, high porosity, large specific surface area, and flexibility. Moreover, electrospinning technology can achieve the versatility of nanofibers through structural design and incorporation of other multifunctional materials. This paper reviews a wide range of applications of electrospinning in FZIBs, mainly in terms of cathode, anode, separator, polymer electrolyte, and all-inone flexible batteries. Firstly, the electrospinning device, principles, and influencing parameters are briefly described, showing its positive impact on FZIBs. Subsequently, the energy storage principles and electrode configurations of FZIBs are described, and some of the common problems of the batteries are illustrated, including zinc anode dendrite growth, corrosion, cathode structure collapse, and poor electrical conductivity. This is followed by a comprehensive overview of research progress on the individual components of FZIBs(cathode, anode, separator, and polymer electrolyte) from the perspective of electrostatically spun fiber materials and an in-depth study of all-in-one flexible batteries. Finally, the challenges and future development of FZIBs are individually concluded and look forward. We hope that this work will provide new ideas and avenues for the development of advanced energy technologies and smart wearable systems.展开更多
Kinetic Alfvén waves(KAWs),with a strong parallel disturbed electric field,play an important role in energy transport and particle acceleration in the magnetotail.On the basis of high-resolution observations of t...Kinetic Alfvén waves(KAWs),with a strong parallel disturbed electric field,play an important role in energy transport and particle acceleration in the magnetotail.On the basis of high-resolution observations of the Magnetospheric Multiscale(MMS)Mission,we present a detailed description of the acceleration process of electrons by KAWs in the plasma sheet boundary layer(PSBL).The MMS observed strong electromagnetic disturbances carrying a parallel disturbed electric field with an amplitude of up to 8 mV/m.The measured ratio of the electric to magnetic field perturbations was larger than the local Alfvén speed and was enhanced as the frequency increased,consistent with the theoretical predictions for KAWs.This evidence indicates that the electromagnetic disturbances should be identified as KAWs.During the KAWs,the energy flux of electrons at energies above 1 keV in the parallel and anti-parallel directions are significantly enhanced,implying occurrences of electron beams at higher energies.Additionally,the KAWs became more electrostaticlike and filled with high-frequency ion acoustic waves.The energy enhancement of electron beams is in accordance with the derived work done with the observed parallel disturbed electric field of KAWs,indicating electron acceleration caused by KAWs.Therefore,these results provide direct evidence of electron acceleration by KAWs embodying electrostatic ion acoustic waves in the PSBL.展开更多
Gradient heterostructure is one of fundamental interfaces and provides an effective platform to achieve gradually changed properties in mechanics,optics,and electronics.Among different types of heterostructures,the gr...Gradient heterostructure is one of fundamental interfaces and provides an effective platform to achieve gradually changed properties in mechanics,optics,and electronics.Among different types of heterostructures,the gradient one may provide multiple resistive states and immobilized conductive fila-ments,offering great prospect for fabricating memristors with both high neuromorphic computation capability and repeatability.Here,we invent a memristor based on a homologous gradient heterostructure(HGHS),compris-ing a conductive transition metal dichalcogenide and an insulating homolo-gous metal oxide.Memristor made of Ta–TaS_(x)O_(y)–TaS 2 HGHS exhibits continuous potentiation/depression behavior and repeatable forward/backward scanning in the read-voltage range,which are dominated by multi-ple resistive states and immobilized conductive filaments in HGHS,respec-tively.Moreover,the continuous potentiation/depression behavior makes the memristor serve as a synapse,featuring broad-frequency response(10^(-1)–10^(5) Hz,covering 106 frequency range)and multiple-mode learning(enhanced,depressed,and random-level modes)based on its natural and moti-vated forgetting behaviors.Such HGHS-based memristor also shows good unifor-mity for 5?7 device arrays.Our work paves a way to achieve high-performance integrated memristors for future artificial neuromorphic computation.展开更多
基金National Natural Science Foundation of China (52103061)Young Elite Scientist Sponsorship Program by China Association for Science and Technology (YESS20220298)+2 种基金Tianjin Enterprise Science and Technology Commissioner Project (23YDTPJC00400)China Postdoctoral Science Foundation (2021T140419, 2022M711959)State Key Laboratory of Membrane and Membrane Separation, Tiangong University。
文摘Flexible wearable batteries are widely used in smartwatches, foldable phones, and fitness trackers due to their thinness and small size. Zinc-based batteries have the advantages of low cost, high safety, and ecofriendliness, which are considered to be the best alternative to flexible lithium-ion batteries(LIBs).Therefore, wearable flexible zinc-ion batteries(FZIBs) have attracted considerable interest as a promising energy storage device. Electrospun nanofibers(ESNFs) have great potential for application in wearable FZIBs due to their low density, high porosity, large specific surface area, and flexibility. Moreover, electrospinning technology can achieve the versatility of nanofibers through structural design and incorporation of other multifunctional materials. This paper reviews a wide range of applications of electrospinning in FZIBs, mainly in terms of cathode, anode, separator, polymer electrolyte, and all-inone flexible batteries. Firstly, the electrospinning device, principles, and influencing parameters are briefly described, showing its positive impact on FZIBs. Subsequently, the energy storage principles and electrode configurations of FZIBs are described, and some of the common problems of the batteries are illustrated, including zinc anode dendrite growth, corrosion, cathode structure collapse, and poor electrical conductivity. This is followed by a comprehensive overview of research progress on the individual components of FZIBs(cathode, anode, separator, and polymer electrolyte) from the perspective of electrostatically spun fiber materials and an in-depth study of all-in-one flexible batteries. Finally, the challenges and future development of FZIBs are individually concluded and look forward. We hope that this work will provide new ideas and avenues for the development of advanced energy technologies and smart wearable systems.
基金supported by the National Natural Science Foundation of China(Grant Nos.41925018,41874194).
文摘Kinetic Alfvén waves(KAWs),with a strong parallel disturbed electric field,play an important role in energy transport and particle acceleration in the magnetotail.On the basis of high-resolution observations of the Magnetospheric Multiscale(MMS)Mission,we present a detailed description of the acceleration process of electrons by KAWs in the plasma sheet boundary layer(PSBL).The MMS observed strong electromagnetic disturbances carrying a parallel disturbed electric field with an amplitude of up to 8 mV/m.The measured ratio of the electric to magnetic field perturbations was larger than the local Alfvén speed and was enhanced as the frequency increased,consistent with the theoretical predictions for KAWs.This evidence indicates that the electromagnetic disturbances should be identified as KAWs.During the KAWs,the energy flux of electrons at energies above 1 keV in the parallel and anti-parallel directions are significantly enhanced,implying occurrences of electron beams at higher energies.Additionally,the KAWs became more electrostaticlike and filled with high-frequency ion acoustic waves.The energy enhancement of electron beams is in accordance with the derived work done with the observed parallel disturbed electric field of KAWs,indicating electron acceleration caused by KAWs.Therefore,these results provide direct evidence of electron acceleration by KAWs embodying electrostatic ion acoustic waves in the PSBL.
基金We thank the financial support from the National Science Fund for Distinguished Young Scholars(No.52125309)the National Natural Science Foundation of China(Nos.51991343,52188101,51920105002,and 51991340)+1 种基金Guang-dong Innovative and Entrepreneurial Research Team Pro-gram(No.2017ZT07C341)the Shenzhen Basic Research Program(Nos.JCYJ20200109144616617 and JCYJ20200109144620815)。
文摘Gradient heterostructure is one of fundamental interfaces and provides an effective platform to achieve gradually changed properties in mechanics,optics,and electronics.Among different types of heterostructures,the gradient one may provide multiple resistive states and immobilized conductive fila-ments,offering great prospect for fabricating memristors with both high neuromorphic computation capability and repeatability.Here,we invent a memristor based on a homologous gradient heterostructure(HGHS),compris-ing a conductive transition metal dichalcogenide and an insulating homolo-gous metal oxide.Memristor made of Ta–TaS_(x)O_(y)–TaS 2 HGHS exhibits continuous potentiation/depression behavior and repeatable forward/backward scanning in the read-voltage range,which are dominated by multi-ple resistive states and immobilized conductive filaments in HGHS,respec-tively.Moreover,the continuous potentiation/depression behavior makes the memristor serve as a synapse,featuring broad-frequency response(10^(-1)–10^(5) Hz,covering 106 frequency range)and multiple-mode learning(enhanced,depressed,and random-level modes)based on its natural and moti-vated forgetting behaviors.Such HGHS-based memristor also shows good unifor-mity for 5?7 device arrays.Our work paves a way to achieve high-performance integrated memristors for future artificial neuromorphic computation.
