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Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition 被引量:3
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作者 Ankur Goswami Priyesh Dhandaria +6 位作者 Soupitak Pal Ryan McGee Faheem Khan zeljka antic Ravi Gaikwad Kovur Prashanthi Thomas Thundat 《Nano Research》 SCIE EI CAS CSCD 2017年第10期3571-3584,共14页
This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis- oriented single crystal sapphire) and amorphous (Si/SiO2 and Si... This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis- oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (-2.9% K^-1 at 296 K), higher mid-IR sensitivity (△R/R = 5.2%), and higher responsivity (8.7 V·W^-1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates. 展开更多
关键词 MOS2 pulsed laser deposition phototherrnal effect infrared (IR) detector INTERFACE
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Pesticide-induced photoluminescence quenching of ultra-small Eu3+-activated phosphate and vanadate nanoparticles
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作者 Jovana Perisa zeljka antic +3 位作者 Chong-Geng Ma Jelena Papan Dragana Jovanovic Miroslav D.Dramicanin 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第3期197-204,共8页
The aim of this research was to investigate the luminescent behavior of ultra-small Eu3+-activated phosphate and vanadate nanoparticles in the presence of pesticides.Nanoparticles have an average diameter of approxima... The aim of this research was to investigate the luminescent behavior of ultra-small Eu3+-activated phosphate and vanadate nanoparticles in the presence of pesticides.Nanoparticles have an average diameter of approximately 2 nm with a narrow size distribution.The monazite crystal structure of phosphate-based particles(space group P121/n1)and single tetragonal zircon-type structure of vanadate-based particles(space group of I41/amd)have been confirmed using X-ray diffraction measurements.All synthesized Eu3+-activated colloidal nanoparticles show sharp emission peaks in the red spectral region.Photoluminescence measurements revealed emission quenching upon addition of millimolar concentrations of following pesticides:4-Chloro-2-methyl-phenoxyacetic acid(MCPA),2,4-Dichlorophenoxyacetic acid(2,4-D)and N-(phosphonomethyl)glycine(Glyphosate).In both phosphate and vanadate-based colloidal nanoparticles luminescence quenching is more evident in the presence of 2,4-D pesticide with the lowest limit of detection(0.7μM)obtained for phosphate-based nanoparticles. 展开更多
关键词 Phosphate/vanadate based colloidal NANOPARTICLES Eu3+ Emission quenching PESTICIDE
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