We examined the wake-up effect in a Ti N/Hf_(0.4)Zr_(0.6)O_(2)/TiN structure.The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field...We examined the wake-up effect in a Ti N/Hf_(0.4)Zr_(0.6)O_(2)/TiN structure.The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle.The space-charge-limited current was stable,indicating that the trap density did not change during the wake-up.The effective charge density in the space-charge region was extracted from capacitance-voltage curves,which demonstrated an increase in free charges at the interface.Based on changing characteristics in these properties,the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61201046)the Natural Science Foundation of Beijing,China(Grant Nos.4202009 and 4162013)。
文摘We examined the wake-up effect in a Ti N/Hf_(0.4)Zr_(0.6)O_(2)/TiN structure.The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle.The space-charge-limited current was stable,indicating that the trap density did not change during the wake-up.The effective charge density in the space-charge region was extracted from capacitance-voltage curves,which demonstrated an increase in free charges at the interface.Based on changing characteristics in these properties,the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.