Enhanced photoresponse performance in Ga/Ga_2O_3 nanocomposite solar-blind ultraviolet photodetectors

In the present work, we explore the solar-blind ultraviolet（UV） photodetectors（PDs） with enhanced photoresponse,fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.

Optical simulation of CsPbI_(3)/TOPCon tandem solar cells with advanced light management

Monolithic perovskite/Si tandem solar cells(TSCs)have experienced rapid development in recent years,demonstrating its potential to exceed the Shockley-Queisser limit of single junction Si solar cells.Unlike typical organic-inorganic hybrid perovskite/silicon heterojunction TSCs,here we propose CsPbI_(3)/TOPCon TSC,which is a promising architecture in consideration of its pleasurable thermal stability and good compatibility with current PERC production lines.The optical performance of CsPbI_(3)/TOPCon TSCs is simulated by the combination of ray-tracing method and transfer matrix method.The light management of the CsPbI_(3)/TOPCon TSC begins with the optimization of the surface texture on Si subcell,indicating that a bifacial inverted pyramid with a small bottom angle of rear-side enables a further minimization of the optical losses.Current matching between the subcells,as well as the parasitic absorption loss from the front transparent conductive oxide,is analyzed and discussed in detail.Finally,an optimized configuration of CsPbI_(3)/TOPCon TSC with a31.78%power conversion efficiency is proposed.This work provides a practical guidance for approaching high-efficiency perovskite/Si TSCs.

Direct ZnO X-Ray Detector with Tunable Sensitivity

Direct ZnO x-ray detectors with tunable sensitivity are realized by delicately controlling the oxygen flux during the sputtering deposition process. The photocurrents induced by x-rays from a 40 kV x-ray tube with a Cu anode increase apparently as the oxygen flux decreases, which is attributed to the introduction of Vo detects.By introducing Vo defects, the annihilation rate of the photo-generated electron-hole pairs will be greatly slowed down, leading to a remarkable photoconductive gain. This finding informs a novel way to design the x-ray detectors based on abundant oxide materials.

Photodynamics of Ga_(Zn)–V_(Zn) complex defect in Ga-doped ZnO

The wide-band-gap II–VI compound semiconductor ZnO is regarded as a promising single-photon emission(SPE)host material.In this work,we demonstrate that a(Ga_(Zn)–V_(Zn))^(-)complex defect can readily be obtained and the density can be controlled in a certain range.In analogy to nitrogen vacancy centers,such a defect in ZnO is expected to be a new single photon source.The optical properties of the(Ga_(Zn)–V_(Zn))^(-)complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements.The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10–20 nanoseconds,indicating a good coherent length for SPE.Finally,a two-level emitter structure is proposed to explain the carrier dynamics.We believe that the photodynamics study of the(Ga_(Zn)–V_(Zn))^(-)complex defect in this work is important for ZnO-based quantum emitters.