A red-emitting phosphor GdNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction (XRD), particle size analyzer and fluorescence spect...A red-emitting phosphor GdNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction (XRD), particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4:Eu3+,Bi3+ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet (UV) light (394 nm) and emit the strong red light of 612 nm due to the Eu3+ transition of SD0~TF2. The opti- mum content of Eu3+ doped in the phosphor GdNbOn:Eu3+ is 20mo1%. The phosphor Gdo.80NbO4:0.20Eu3+,0.03Bi3+ shows much stronger photoluminescence intensity and better chromaticity coordinates (x=0.642, 0.352) than GdNbO4:Eu3+. It is confirmed that Gdo.80NbO4:0.20Eu3+,0.03Bi3+ is a potential candidate for near-UV chip-based white light emitting diodes.展开更多
基金the National"12th Five-year"Science and Technology Support Program of China(No.2011BAE22B03-3)the Project of Chong qing Scientific and Technological Commission(No.CSTC2010AA4048)
文摘A red-emitting phosphor GdNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction (XRD), particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4:Eu3+,Bi3+ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet (UV) light (394 nm) and emit the strong red light of 612 nm due to the Eu3+ transition of SD0~TF2. The opti- mum content of Eu3+ doped in the phosphor GdNbOn:Eu3+ is 20mo1%. The phosphor Gdo.80NbO4:0.20Eu3+,0.03Bi3+ shows much stronger photoluminescence intensity and better chromaticity coordinates (x=0.642, 0.352) than GdNbO4:Eu3+. It is confirmed that Gdo.80NbO4:0.20Eu3+,0.03Bi3+ is a potential candidate for near-UV chip-based white light emitting diodes.