Bi_(2)O_(2)Se nanoplates for broadband photodetector and full-color imaging applications

Broadband light detection and sensing are widely applied in modern technology.As a promising candidate for next-generation two-dimensional(2D)optoelectronic material,bismuth oxyselenide(Bi_(2)O_(2)Se)nanoplates exhibit many prospects in the application of visible light detection due to their peculiar properties.In this work,we report the photodetection performance of single-crystal 2D Bi_(2)O_(2)Se nanoplates grown on SiO_(2)based on a ternary-alloy growth model by utilizing chemical vapor deposition(CVD).The Bi_(2)O_(2)Se nanoplates were found to have an even and uniform square shape with side lengths up to 15μm and an approximate thickness of 15 nm.A visible-light photodetector was fabricated based on a CVD-grown Bi_(2)O_(2)Se nanoplate,and characterized by a set of illumination experiments using a 400 nm laser at temperatures ranging from 77 to 370 K.The device exhibited superior performance at the temperature of 77 K,with a responsivity of 523 A/W,a specific detectivity of 1.37×10^(11)Jones,a response time of 0.2175 ms,an external quantum efficiency of 162,119.44%,resulting in high-quality and fullcolor imaging in the visible spectrum.These results indicate that the single-crystalline Bi_(2)O_(2)Se nanoplates have excellent potential in broadband photodetection and non-cryogenic imaging.