Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high r...Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high reliability in several kHz,1 kV input,and several kW output applications.However,the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage,high-frequency,medium-high-power DC conversion applications have not yet been investigated thoroughly.Two 1 kV,3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters,power density,zero voltage switch realization,and overall efficiency.This provides guidance for the appropriate evaluation of WBG devices in high-voltage,high-frequency,and medium-high-power applications.展开更多
基金Supported by Industrial Prospective and Key Core Technology Funding of Jiangsu Province(BE2019113).
文摘Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high reliability in several kHz,1 kV input,and several kW output applications.However,the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage,high-frequency,medium-high-power DC conversion applications have not yet been investigated thoroughly.Two 1 kV,3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters,power density,zero voltage switch realization,and overall efficiency.This provides guidance for the appropriate evaluation of WBG devices in high-voltage,high-frequency,and medium-high-power applications.
