Compared with COMS planar technology,FinFET technology has more obvious advantages in advanced nanoscale devices,which provides the possibility of continuous advancement of Moore’s Law.FinFET process devices have att...Compared with COMS planar technology,FinFET technology has more obvious advantages in advanced nanoscale devices,which provides the possibility of continuous advancement of Moore’s Law.FinFET process devices have attracted extensive attention in the radiation resistance field,especially in single-event effects(SEEs).Due to the particularity of structure for 3D FinFET devices,effect from the angle of incidence is an important factor to be taken into account.展开更多
The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence a...The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.展开更多
文摘Compared with COMS planar technology,FinFET technology has more obvious advantages in advanced nanoscale devices,which provides the possibility of continuous advancement of Moore’s Law.FinFET process devices have attracted extensive attention in the radiation resistance field,especially in single-event effects(SEEs).Due to the particularity of structure for 3D FinFET devices,effect from the angle of incidence is an important factor to be taken into account.
基金supported by the National Natural Science Foundation of China(Grant Nos. 11179003,10975164,10805062 and 11005134)
文摘The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.
