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Growth of high quality Sr2IrO4 epitaxial thin films on conductive substrates
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作者 Hui Xu zhangzhang cui +1 位作者 Xiaofang Zhai Yalin Lu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第7期490-494,共5页
Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent ex... Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent example is the single layer Sr2IrO4, in which superconductivity has been proposed under electron doping.However, the synthesis of Sr2IrO4 high quality thin films has been a huge challenge due to the easy formation of impurities associated with different numbers of SrO layers.Thus techniques to optimize the growth of pure phase Sr2IrO4 are urgently required.Here we report the deposition of high quality Sr2IrO4 thin films on both insulating SrTiO3 and conducting SrTiO3:Nb substrates using pulsed laser deposition assisted with reflective high-energy electron diffraction.The optimal deposition temperature of Sr2IrO4 epitaxial films on SrTiO3:Nb substrates is about 90℃ lower than that on SrTiO3 substrates.The electrical transports of high quality Sr2IrO4 films are measured, which follow the three-dimensional Mott variable-range hopping model.The film magnetizations are measured, which show weak ferromagnetism below ~240 K with a saturation magnetization of~ 0.2 μB/Ir at 5 K.This study provides applicable methods to prepare high quality 5 d Sr2IrO4 epitaxial films, which could be extended to other Ruddlesden–Popper phases and potentially help the future study of exotic quantum phenomena in them. 展开更多
关键词 SUBSTRATES PULSED LASER DEPOSITION iridates conduction mechanism
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电场可逆调控二维单层氧化物磁电性能研究
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作者 王国鹏 胡涛 +10 位作者 熊奕敏 刘学 沈胜春 王建林 车梦倩 崔璋璋 张莹莹 杨鲁懿 李正操 陆亚林 田明亮 《Science Bulletin》 SCIE EI CAS CSCD 2023年第15期1632-1639,M0004,共9页
具有原子层厚度的氧化物磁性材料拥有将二维磁性应用到下一代自旋电子学新兴领域的巨大潜力,引起了研究者的广泛关注.因此,实现二维单层氧化物磁、电性能的磁场和电场调控,为未来低功耗自旋电子器件提供了广阔应用前景.然而,电场调控二... 具有原子层厚度的氧化物磁性材料拥有将二维磁性应用到下一代自旋电子学新兴领域的巨大潜力,引起了研究者的广泛关注.因此,实现二维单层氧化物磁、电性能的磁场和电场调控,为未来低功耗自旋电子器件提供了广阔应用前景.然而,电场调控二维单层氧化物磁性报道很少.本工作利用离子液体门电压进行质子掺杂,实现了对二维单层氧化物(SrRuO_(3))_(1)/(SrTiO_(3))_(N)(N=1,3)磁、电性能的电场可逆调控.随着质子掺杂浓度提高,在(SrRuO_(3))_(1)/(SrTiO_(3))_(1)中观察到了从铁磁金属到反铁磁绝缘态相变,并伴随着磁各向异性的转变.理论分析表明,质子掺杂引起的能带结构改变是结构和磁、电性能相变的主要原因.同时,SrTiO_(3)层起到质子筛作用,在质子的演化过程中扮演重要角色.该研究通过电场调控二维单层氧化物的结构和物性,为实现材料的多功能性提供了重要思路,同时也为实现低功耗功能器件提供了应用潜力. 展开更多
关键词 Electric-field control 2D oxide monolayer magnets Magnetic transition Proton sieve
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